TJ15S10M3 Power MOSFET (P-ch single)

DataSheet
Feature
Application ScopeMotor drivers / Switching regulators
PolarityP-ch
GenerationU-MOSⅥ
RoHS Compatible Product(s) (#)Available
Assembly basesJapan
Package Information
Toshiba Package NameDPAK+
Pins3
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID-15A
Power DissipationPD75W
Drain-Source voltageVDSS-100V
Drain-Source voltageVDSS-100V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Input capacitance (Typ.)Ciss-3200pF
Total gate charge (Typ.)Qg-69nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=10V0.13Ω
Documents
PSpicePSpice Model[Dec,2015](lib: 3KB)
Reliability InformationReliability Data[Dec,2014](PDF: 161KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
Application NoteConstruction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
Application NoteMaximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
Application NoteElectrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
Application NoteApplication Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
Application NoteHeat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)