TK1R4F04PB Power MOSFET (N-ch single 30V《VDSS≤60V)

DataSheet
Feature
Application ScopeHigh efficiency DC/DC converters / Motor drivers / Switching regulators
PolarityN-ch
GenerationU-MOSⅨ-H
RoHS Compatible Product(s) (#)Available
Assembly basesJapan
Package Information
Package Image
Toshiba Package NameTO-220SM(W)
Pins3
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID160A
Power DissipationPD205W
Drain-Source voltageVDSS40V
Drain-Source voltageVDSS40V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Input capacitance (Typ.)Ciss-5500pF
Total gate charge (Typ.)Qg-103nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=6V0.00190Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=10V0.00135Ω
Documents
PSpicePSpice Model[Dec,2015](lib: 3KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
Application NoteConstruction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
Application NoteMaximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
Application NoteElectrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
Application NoteApplication Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
Application NoteHeat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)
TJ150F06M3L