TPCP8L01 Power transistor for low frequency applications

DataSheet
Feature
FeatureNPN:Darlington / HED:200V/1A
PolarityNPN + HED
RoHS Compatible Product(s) (#)Available
Assembly basesJapan / Malaysia
Package Information
Package Image
Toshiba Package NamePS-8
Pins8
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Collector CurrentIC0.9A
Collector CurrentICP3.0A
Collector power dissipationPC0.9W
Collector-emitter voltageVCEO120V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
DC Current Gain hFE (Max)hFEIC=1A
VCE=2V
9000-
DC Current Gain hFE (Min)hFEIC=1A
VCE=2V
2000-
Collector Emitter Saturation Voltage (Max)VCE(sat)IB=1mA
IC=1A
1.5V
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
TPCP8L01(TE85L,F)Japan3000yes
Documents
Reliability InformationReliability Data[Mar,2016](PDF: 160KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
Application NoteConstruction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
Application NoteMaximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
Application NoteElectrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
Application NoteApplication Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
Application NoteHeat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogBipolar Power Transistors[Jun,2015](PDF: 1139KB)