TTD1409B Power transistor for high-speed switching applications

DataSheet
Feature
FeatureHigh hFE
Application ScopeHigh current switching
PolarityNPN
RoHS Compatible Product(s) (#)Available
Assembly basesChina
Package Information
Package Image
Toshiba Package NameTO-220SIS
JEITASC-67
Pins3
MountingThrough Hole
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Collector CurrentIC6A
Collector CurrentICP10A
Collector power dissipationPC25W
Collector-Base VoltageVCBO600V
Collector-emitter voltageVCEO400V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
DC Current Gain hFE (Min)hFE-600-
Collector Emitter Saturation Voltage (Max)VCE(sat)-2.0V
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
TTD1409B,S4X(SChina50yes
Documents
Reliability InformationReliability Data[May,2016](PDF: 86KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogBipolar Power Transistors[Jun,2015](PDF: 1139KB)
TTD1415B