IRFIBE30G, SiHFIBE30G Power MOSFET

Features
  • Isolated Package
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s;      f = 60 Hz)
  • Sink to Lead Creepage Distance = 4.8 mm
Datasheet
Application Notes
General Information
RC Thermal Models
Reliability Data
IRFIBE30G, SiHFIBE30G 91184
Device Application Note AN1005 91051
General Information 91155
IRFIBE30G_RC, SiHFIBE30G_RC 91184
Package Reliability 91155
Silicon Technology Reliability 63402
IRFIBE30G, SiHFIBE30G Power MOSFET 91184