BLC8G22LS-450AV:LDMOS功率晶体管

450 W LDMOS封装非对称Doherty功率晶体管,适合于2110 MHz至2170 MHz频率范围内的基站应用。

特性和优势
    • 出色的耐用性
    • 高效
    • 低热阻,提供极佳的热稳定性
    • 更低的输出电容提升了Doherty应用的性能
    • 专为低内存占用量设计,提供极佳的数字预失真性能
    • 内部匹配,便于使用
    • 集成ESD保护
    • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
应用
    • RF功率放大器,适合于2110 MHz至2170 MHz频率范围内的基站和多载波应用
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range21102170MHz
PL(1dB)nominal output power at 1 dB gain compression450W
Gppower gainPL(AV) = 85 W; VDS = 28 V1314dB
RLininput return lossPL(AV) = 85 W; VDS = 28 V; IDq = 1000 mA-12-7dB
ηDdrain efficiencyPL(AV) = 85 W; VDS = 28 V; 2110 MHz < f < 2170 MHz; IDq = 1000 mA3741%
ACPRadjacent channel power ratioPL(AV) = 85 W; VDS = 28 V; 2110 MHz < f < 2170 MHz; IDq = 1000 mA-33-27dBc
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLC8G22LS-450AV
DFM6
(SOT1258-1)
Reel 13" Q1/T1 in Drypack量产Standard MarkingBLC8G22LS-450AVY( 9340 689 28518 )
Tray, NonBakeable, Multiple in Drypack量产Standard MarkingBLC8G22LS-450AVZ( 9340 689 28517 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1D2Pdrain2 (peak)
2D1Mdrain1 (main)
3G1Mgate1 (main)
4G2Pgate2 (peak)
5Ssource
6VDPvideo decoupling (peak)
7VDMvideo decoupling (main)
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLC8G22LS-450AVBLC8G22LS-450AVYAlways Pb-free33
BLC8G22LS-450AVBLC8G22LS-450AVZAlways Pb-free33
文档资料
档案名称标题类型格式日期
BLC8G22LS-450AV (中文)Power LDMOS transistorData sheetpdf2015-06-02
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLC8G22LS-450AV_Data-sheetPCB Design BLC8G22LS-450AV (Data sheet)Design supportzip2015-06-01
75017604Gen8: the latest LDMOS RF power portfolio for wireless infrastructuresLeafletpdf2014-09-04
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
Factsheet_Gen8_LDMOS_RF_pt_with_VBWFactsheet Gen8 LDMOS RF power transistor with Video BandwidthOther typepdf2012-10-23
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
NXP_RFpower_Lib_V09p0RF Power Model Library for Microwave Office®Simulation modelzip2014-11-11
NXP_RFpower_Manual_MWO_20141111RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation modelpdf2014-11-11
NXP_RFPower_Simulation_ExampleRF Power Simulation Example for Microwave Office®Simulation modelzip2012-06-11
BLC8G22LS-450AV_ADS-2009_ModelBLC8G22LS-450AV ADS-2009 ModelSimulation modelzip2014-09-01
BLC8G22LS-450AV_ADS-2011_ModelBLC8G22LS-450AV ADS-2011 ModelSimulation modelzip2014-09-01
订购信息
型号订购码 (12NC)可订购的器件编号
BLC8G22LS-450AV9340 689 28518BLC8G22LS-450AVY
BLC8G22LS-450AV9340 689 28517BLC8G22LS-450AVZ
模型
标题类型日期
RF Power Model Library for Microwave Office®Simulation model2014-11-11
RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation model2014-11-11
RF Power Simulation Example for Microwave Office®Simulation model2012-06-11
BLC8G22LS-450AV ADS-2009 ModelSimulation model2014-09-01
BLC8G22LS-450AV ADS-2011 ModelSimulation model2014-09-01
其它
标题类型日期
PCB Design BLC8G22LS-450AV (Data sheet)Design support2015-06-01
Power LDMOS transistor BLC8G22LS-450AV
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Gen8: the latest LDMOS RF power portfolio for wireless infrastructures base_stations
Fatigue in aluminum bond wires gan_devices
Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth BLF8G38LS-75V
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
RF Power Model Library for Microwave Office® CLF1G0060_S_30
RF Power Model Library Manual and Installation Instructions for Microwave Office® CLF1G0060_S_30
RF Power Simulation Example for Microwave Office® CLF1G0060_S_30
BLC8G22LS-450AV ADS-2009 Model BLC8G22LS-450AV
BLC8G22LS-450AV ADS-2011 Model BLC8G22LS-450AV
PCB Design BLC8G22LS-450AV (Data sheet) BLC8G22LS-450AV