BLC9G20LS-120V:Power LDMOS transistor

120 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.

特性和优势
    • Excellent ruggedness
    • High efficiency
    • Low thermal resistance providing excellent thermal stability
    • Decoupling leads to enable improved video bandwidth performance (75 MHz typical)
    • Designed for broadband operation (1805 MHz to 1995 MHz)
    • Lower output capacitance for improved performance in Doherty applications
    • Designed for low memory effects providing excellent pre-distortability
    • Internally matched for ease of use
    • Integrated ESD protection
    • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
应用
    • RF power amplifiers for base stations and multi carrier applications in the 1805 MHz to 1995 MHz frequency range
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range18051995MHz
PL(1dB)nominal output power at 1 dB gain compression120W
Gppower gainPL(AV) = 30 W; VDS = 28 V [0]19.2dB
RLininput return lossPL(AV) = 30 W; VDS = 28 V [0]-13dB
ηDdrain efficiencyPL(AV) = 30 W; VDS = 28 V [0]31%
ACPR5Madjacent channel power ratio (5 MHz)PL(AV) = 30 W; VDS = 28 V [0]-33dBc
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLC9G20LS-120V
DFM6
(SOT1275-3)
sot1275-3_poReel 13" Q1/T1 in Drypack开发中Standard MarkingBLC9G20LS-120VY( 9340 691 89518 )
Tray, NonBakeable, Multiple in Drypack开发中Standard MarkingBLC9G20LS-120VZ( 9340 691 89517 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1D1drain 1
2D2drain2
3G1gate 1
4G2gate 2
5VDvideo decoupling
6VDvideo decoupling
7Ssource
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLC9G20LS-120VBLC9G20LS-120VYAlways Pb-free33
BLC9G20LS-120VBLC9G20LS-120VZAlways Pb-free33
文档资料
档案名称标题类型格式日期
BLC9G20LS-120V (中文)Power LDMOS transistorData sheetpdf2015-07-03
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
75017604Gen8: the latest LDMOS RF power portfolio for wireless infrastructuresLeafletpdf2014-09-04
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
Factsheet_Gen8_LDMOS_RF_pt_with_VBWFactsheet Gen8 LDMOS RF power transistor with Video BandwidthOther typepdf2012-10-23
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
sot1275-3_poAir cavity plastic earless flanged package; 6 leadsOutline drawingpdf2014-11-19
订购信息
型号订购码 (12NC)可订购的器件编号
BLC9G20LS-120V9340 691 89518BLC9G20LS-120VY
BLC9G20LS-120V9340 691 89517BLC9G20LS-120VZ
Power LDMOS transistor BLC9G20LS-120V
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Gen8: the latest LDMOS RF power portfolio for wireless infrastructures base_stations
Fatigue in aluminum bond wires gan_devices
Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth BLF8G38LS-75V
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
Air cavity plastic earless flanged package; 6 leads BLC9G20LS-120V