BLF10H6600P：功率LDMOS晶体管
600W LDMOS RF功率晶体管，适合发射器应用和工业应用。该器件凭借其出色的耐用性而非常适合数字和模拟发射器应用。
特性和优势
应用
| 产品图片 |
关键参数
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 400 | 1000 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 600 | W | |||
| Gp | power gain | VDS = 50 V; f1 = 860 MHz; f2 = 860.1 MHz | 19.8 | 20.8 | dB | |
| ηD | drain efficiency | VDS = 50 V; IDq = 1.3 A; f1 = 860 MHz; f2 = 860.1 MHz; | 42 | 46 | % | |
| PL(AV) | average output power | f1 = 860 MHz; f2 = 860.1 MHz | 250 | W | ||
| IMD3 | third-order intermodulation distortion | VDS = 50 V; IDq = 1.3 A; f1 = 860 MHz; f2 = 860.1 MHz | -32 | -28 | dBc |
封装与包装
| 型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 可订购的器件编号, (订购码 (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF10H6600P |  (SOT539A) | sot539a_po | Bulk Pack | 量产 | Standard Marking | BLF10H6600PU( 9340 676 47112 ) |
引脚配置信息
| Pin | Symbol | Description | 外形简图 | 图形符号 |
|---|---|---|---|---|
| 1 | D1 | drain1 |  |  |
| 2 | D2 | drain2 | ||
| 3 | G1 | gate1 | ||
| 4 | G2 | gate2 | ||
| 5 | S | souce |
无铅环保信息
| 型号 | 可订购的器件编号 | RoHS / RHF | 无铅转换日期 | 潮湿敏感度等级 | MSL LF |
|---|---|---|---|---|---|
| BLF10H6600P | BLF10H6600PU |   | Always Pb-free | NA | NA |
文档资料
| 档案名称 | 标题 | 类型 | 格式 | 日期 |
|---|---|---|---|---|
| BLF10H6600P_BLF10H6600PS (中文) | Power LDMOS transistor | Data sheet | 2013-07-02 | |
| AN10896 | Mounting and Soldering of RF transistors | Application note | 2015-03-24 | |
| PCB_Design_BLF10H6600P_BLF10H6600PS_Data-sheet | PCB Design BLF10H6600P(S) (Data sheet) | Design support | zip | 2013-07-02 |
| fatigue_in_aluminum_bond_wires | Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
| NXP_RF_manual_19th_edition | RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 | Other type | 2015-05-19 | |
| sot539a_po | flanged balanced ceramic package; 2 mounting holes; 4 leads | Outline drawing | 2010-04-06 | |
| SOT539A_112 | CDFM4; blister pack; standard product orientation 12NC ending 112 | Packing | 2012-12-03 |
订购信息
| 型号 | 订购码 (12NC) | 可订购的器件编号 |
|---|---|---|
| BLF10H6600P | 9340 676 47112 | BLF10H6600PU |
其它
| 标题 | 类型 | 日期 |
|---|---|---|
| PCB Design BLF10H6600P(S) (Data sheet) | Design support | 2013-07-02 |
- Power LDMOS transistor BLF10H6600P_S
- Power LDMOS transistor BLF10H6600P_S
- Power LDMOS transistor BLF10H6600P_S
- Mounting and Soldering of RF transistors aerospace_defense
- Fatigue in aluminum bond wires gan_devices
- RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
- flanged balanced ceramic package; 2 mounting holes; 4 leads BLU6H0410L_S_600P
- CDFM4; blister pack; standard product orientation 12NC ending 112 BLU6H0410L_S_600P
- PCB Design BLF10H6600P(S) (Data sheet) BLF10H6600P_S
