BLF178XR:功率LDMOS晶体管

1400 W极耐用LDMOS功率晶体管,适用于HF至128 MHz频段广播和工业应用。

特性和优势
    • 方便的功率控制
    • 集成ESD保护
    • 极佳的强度
    • 高效率
    • 极佳的热稳定性
    • 主要用于宽带操作(HF至128 MHz)
    • 符合有害物质限制的Directive 2002/95/EC
应用
    • 工业、科学和医疗应用
    • 广播发射器应用
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range10128MHz
PL(1dB)nominal output power at 1 dB gain compression1400W
Gppower gainVDS = 50 V; PL = 1400 W [0]2728dB
RLininput return lossVDS = 50 V; IDq = 40 mA; PL = 1400 W [0]-15-11dB
ηDdrain efficiencyVDS = 50 V; f = 108 MHz; IDq = 40 mA; PL = 1400 W [0]6872%
PLoutput power[0]1400W
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF178XR

(SOT539A)
sot539a_poBulk Pack量产Standard MarkingBLF178XR,112( 9340 662 85112 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1D1drain1
2D2drain2
3G1gate1
4G2gate2
5Ssource
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF178XRBLF178XR,112Always Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLF178XR_BLF178XRS (中文)Power LDMOS transistorData sheetpdf2013-07-12
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
PCB_Design_BLF178XR_BLF178XRS_Data-sheetPCB Design BLF178XR(S) (Data sheet)Design supportzip2012-06-19
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
NXP_RFpower_Lib_V09p0RF Power Model Library for Microwave Office®Simulation modelzip2014-11-11
NXP_RFpower_Manual_MWO_20141111RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation modelpdf2014-11-11
NXP_RFPower_Simulation_ExampleRF Power Simulation Example for Microwave Office®Simulation modelzip2012-06-11
BLF178XR_ADS-2009_ModelBLF178XR ADS-2009 ModelSimulation modelzip2013-06-11
BLF178XR_ADS-2011_ModelBLF178XR ADS-2011 ModelSimulation modelzip2014-04-10
sot539a_poflanged balanced ceramic package; 2 mounting holes; 4 leadsOutline drawingpdf2010-04-06
SOT539A_112CDFM4; blister pack; standard product orientation 12NC ending 112Packingpdf2012-12-03
订购信息
型号订购码 (12NC)可订购的器件编号
BLF178XR9340 662 85112BLF178XR,112
模型
标题类型日期
RF Power Model Library for Microwave Office®Simulation model2014-11-11
RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation model2014-11-11
RF Power Simulation Example for Microwave Office®Simulation model2012-06-11
BLF178XR ADS-2009 ModelSimulation model2013-06-11
BLF178XR ADS-2011 ModelSimulation model2014-04-10
其它
标题类型日期
PCB Design BLF178XR(S) (Data sheet)Design support2012-06-19
Power LDMOS transistor BLF178XR_S
Power LDMOS transistor BLF178XR_S
Power LDMOS transistor BLF178XR_S
Mounting and Soldering of RF transistors aerospace_defense
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
flanged balanced ceramic package; 2 mounting holes; 4 leads BLU6H0410L_S_600P
CDFM4; blister pack; standard product orientation 12NC ending 112 BLU6H0410L_S_600P
RF Power Model Library for Microwave Office® CLF1G0060_S_30
RF Power Model Library Manual and Installation Instructions for Microwave Office® CLF1G0060_S_30
RF Power Simulation Example for Microwave Office® CLF1G0060_S_30
BLF178XR ADS-2009 Model BLF178XR_S
BLF178XR ADS-2011 Model BLF178XR_S
PCB Design BLF178XR(S) (Data sheet) BLF178XR_S