BLF645:宽带功率LDMOS晶体管

100 W LDMOS RF功率推挽晶体管,用于广播发射器和工业应用。此晶体管适合HF至1400 MHz的频率范围。此器件极佳的强度和宽带性能使其成为数字应用的理想选择。

特性和优势
    • 集成ESD保护
    • 极佳的可靠性
    • 极佳的强度
    • 高功率增益
    • 高效率
    • 方便的功率控制
    • 符合有害物质限制的Directive 2002/95/EC
应用
    • HF至1400 MHz频率范围内的通信发射器应用
    • HF至1400 MHz频率范围内的工业应用
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range11400MHz
PL(1dB)nominal output power at 1 dB gain compression100W
Gppower gainPL = 100 W; VDS = 32 V16.518dB
ηDdrain efficiencyVDS = 32 V; f = 1300 MHz; IDq = 900 mA5356%
PLoutput power100W
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF645

(SOT540A)
sot540a_poBulk Pack量产Standard MarkingBLF645,112( 9340 619 64112 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1D1drain1
2D2drain2
3G1gate1
4G2gate2
5Ssource
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF645BLF645,112Always Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLF645 (中文)Broadband power LDMOS transistorData sheetpdf2010-01-27
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
AN10953BLF645 10 MHz to 600 MHz 120 W amplifierApplication notepdf2011-03-03
PCB_Design_BLF645_Data-sheetPCB Design BLF645 (Data sheet)Design supportzip2012-02-24
PCB_Design_BLF645_AN10953PCB Design BLF645 (AN10953)Design supportzip2012-02-24
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
RFPower_Longevity_OverviewRF Power Longevity OverviewOther typepdf2014-09-09
BLF645_ADS-2009_ModelBLF645 ADS-2009 ModelSimulation modelzip2013-02-28
NXP_RFpower_Lib_V09p0RF Power Model Library for Microwave Office®Simulation modelzip2014-11-11
NXP_RFpower_Manual_MWO_20141111RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation modelpdf2014-11-11
NXP_RFPower_Simulation_ExampleRF Power Simulation Example for Microwave Office®Simulation modelzip2012-06-11
BLF645_ADS-2011_ModelBLF645 ADS-2011 ModelSimulation modelzip2014-04-10
sot540a_poflanged balanced ceramic package; 2 mounting holes; 4 leadsOutline drawingpdf2009-10-08
SOT540A_112CDFM4; blister pack; standard product orientation 12NC ending 112Packingpdf2012-12-03
订购信息
型号订购码 (12NC)可订购的器件编号
BLF6459340 619 64112BLF645,112
模型
标题类型日期
BLF645 ADS-2009 ModelSimulation model2013-02-28
RF Power Model Library for Microwave Office®Simulation model2014-11-11
RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation model2014-11-11
RF Power Simulation Example for Microwave Office®Simulation model2012-06-11
BLF645 ADS-2011 ModelSimulation model2014-04-10
其它
标题类型日期
PCB Design BLF645 (Data sheet)Design support2012-02-24
PCB Design BLF645 (AN10953)Design support2012-02-24
Broadband power LDMOS transistor BLF645
Mounting and Soldering of RF transistors aerospace_defense
BLF645 10 MHz to 600 MHz 120 W amplifier BLF645
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
RF Power Longevity Overview gan_devices
flanged balanced ceramic package; 2 mounting holes; 4 leads BLF645
CDFM4; blister pack; standard product orientation 12NC ending 112 BLF645
BLF645 ADS-2009 Model BLF645
RF Power Model Library for Microwave Office® CLF1G0060_S_30
RF Power Model Library Manual and Installation Instructions for Microwave Office® CLF1G0060_S_30
RF Power Simulation Example for Microwave Office® CLF1G0060_S_30
BLF645 ADS-2011 Model BLF645
PCB Design BLF645 (Data sheet) BLF645
PCB Design BLF645 (AN10953) BLF645