BLF6G10-45:功率LDMOS晶体管

45 W LDMOS功率晶体管,适合700 MHz至1000 MHz频率范围的基站应用。

特性和优势
    • 方便的功率控制
    • 集成ESD保护
    • 极佳的强度
    • 高效率
    • 极佳的热稳定性
    • 设计用于宽带操作(700 MHz至1000 MHz)
    • 内部匹配,便于使用
    • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
应用
    • 适用于W-CDMA基站的RF功率放大器
    • 700 MHz至1000 MHz频率范围内的多载波应用
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range7001000MHz
PL(1dB)nominal output power at 1 dB gain compression45W
Gppower gainPL(AV) = 1 W; VDS = 28 V2122.523.9dB
RLininput return lossPL(AV) = 1 W; VDS = 28 V; IDq = 350 mA-13-8dB
ηDdrain efficiencyPL(AV) = 1 W; VDS = 28 V; 920 MHz < f < 960 MHz; IDq = 350 mA6.97.8%
PL(AV)average output power1W
ACPRadjacent channel power ratioPL(AV) = 1 W; VDS = 28 V; 920 MHz < f < 960 MHz; IDq = 350 mA-48.5-45.5dBc
引脚配置信息
PinSymbolDescription外形简图图形符号
1Ddrain
2Ggate
3Ssource
文档资料
档案名称标题类型格式日期
BLF6G10-45 (中文)Power LDMOS transistorData sheetpdf2013-03-11
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
BLF6G10-45_ADS-2009_ModelBLF6G10-45 ADS-2009 ModelSimulation modelzip2013-04-02
NXP_RFpower_Lib_V09p0RF Power Model Library for Microwave Office®Simulation modelzip2014-11-11
NXP_RFpower_Manual_MWO_20141111RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation modelpdf2014-11-11
NXP_RFPower_Simulation_ExampleRF Power Simulation Example for Microwave Office®Simulation modelzip2012-06-11
sot608a_poflanged ceramic package; 2 mounting holes; 2 leadsOutline drawingpdf2002-02-10
模型
标题类型日期
BLF6G10-45 ADS-2009 ModelSimulation model2013-04-02
RF Power Model Library for Microwave Office®Simulation model2014-11-11
RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation model2014-11-11
RF Power Simulation Example for Microwave Office®Simulation model2012-06-11
Power LDMOS transistor BLF6G10-45
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
flanged ceramic package; 2 mounting holes; 2 leads BLS6G3135_S_20
BLF6G10-45 ADS-2009 Model BLF6G10-45
RF Power Model Library for Microwave Office® CLF1G0060_S_30
RF Power Model Library Manual and Installation Instructions for Microwave Office® CLF1G0060_S_30
RF Power Simulation Example for Microwave Office® CLF1G0060_S_30