BLF6G10LS-135RN:功率LDMOS晶体管

135 W LDMOS功率晶体管,适用于700 MHz至1000 MHz频率范围的基站应用。

特性和优势
    • 方便的功率控制
    • 集成ESD保护
    • 增强的强度
    • 高效率
    • 极佳的热稳定性
    • 主要用于宽带操作(700 MHz至1000 MHz)
    • 内部匹配以方便使用
    • 符合RoHS的Directive 2002/95/EC
应用
    • GSM、GSM EDGE、W-CDMA和CDMA基站RF功率放大器
    • 700 MHz 至1000 MHz频率范围内的多载波应用
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range7001000MHz
PL(1dB)nominal output power at 1 dB gain compression135W
Gppower gainPL(AV) = 26.5 W; VDS = 28 V2021dB
RLininput return lossPL(AV) = 26.5 W; VDS = 28 V; IDq = 950 mA-10-6.5dB
ηDdrain efficiencyPL(AV) = 26.5 W; VDS = 28 V; 869 MHz < f < 894 MHz; IDq = 950 mA2628%
PL(AV)average output power26.5W
ACPRadjacent channel power ratioPL(AV) = 26.5 W; VDS = 28 V; 869 MHz < f < 894 MHz; IDq = 950 mA-39-36.5dBc
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF6G10LS-135RN

(SOT502B)
sot502b_poReel 13" Q1/T1量产Standard MarkingBLF6G10LS-135RN,11( 9340 632 07118 )
Bulk Pack量产Standard MarkingBLF6G10LS-135RN:11( 9340 632 07112 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1Ddrain
2Ggate
3Ssource
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF6G10LS-135RNBLF6G10LS-135RN,11Always Pb-freeNANA
BLF6G10LS-135RNBLF6G10LS-135RN:11Always Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLF6G10-135RN_10LS-135RN (中文)Power LDMOS transistorData sheetpdf2010-01-21
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
NXP_RFpower_Lib_V09p0RF Power Model Library for Microwave Office®Simulation modelzip2014-11-11
NXP_RFpower_Manual_MWO_20141111RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation modelpdf2014-11-11
BLF6G10-135R_ADS-2009_ModelBLF6G10-135R ADS-2009 ModelSimulation modelzip2013-03-01
NXP_RFPower_Simulation_ExampleRF Power Simulation Example for Microwave Office®Simulation modelzip2012-06-11
sot502b_poearless flanged ceramic package; 2 leadsOutline drawingpdf2007-05-08
SOT502B_112CDFM2; blister pack; standard product orientation 12NC ending 112Packingpdf2012-12-03
订购信息
型号订购码 (12NC)可订购的器件编号
BLF6G10LS-135RN9340 632 07118BLF6G10LS-135RN,11
BLF6G10LS-135RN9340 632 07112BLF6G10LS-135RN:11
模型
标题类型日期
RF Power Model Library for Microwave Office®Simulation model2014-11-11
RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation model2014-11-11
BLF6G10-135R ADS-2009 ModelSimulation model2013-03-01
RF Power Simulation Example for Microwave Office®Simulation model2012-06-11
Power LDMOS transistor BLF6G10LS-135RN
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
earless flanged ceramic package; 2 leads BLS7G3135LS-200
CDFM2; blister pack; standard product orientation 12NC ending 112 BLS7G3135LS-200
RF Power Model Library for Microwave Office® CLF1G0060_S_30
RF Power Model Library Manual and Installation Instructions for Microwave Office® CLF1G0060_S_30
BLF6G10-135R ADS-2009 Model BLF6G10LS-135RN
RF Power Simulation Example for Microwave Office® CLF1G0060_S_30