BLF6G15L-500H：功率LDMOS晶体管
适用于发射器应用和工业应用的500W LDMOS RF功率晶体管。此晶体管最适合数字应用并可提供65 W平均DVB-T（在1.5 GHz）。此器件极佳的强度使其成为数字发射器应用的理想选择。
特性和优势
应用
| 产品图片 |
关键参数
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 1400 | 1500 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 500 | W | |||
| Gp | power gain | PL(AV) = 65 W; VDS = 50 V | 14.5 | 16 | dB | |
| ηD | drain efficiency | PL(AV) = 65 W; VDS = 50 V; 1452 MHz < f < 1492 MHz; IDq = 1300 mA | 16 | 19 | % | |
| PL(AV) | average output power | 65 | W | |||
| IMDshldr | intermodulation distortion shoulder attenuation | [0] | -32 | -30 | dBc | |
| PAR | peak-to-average ratio | [1] | 8.5 | 9 | dB |
封装与包装
| 型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 可订购的器件编号, (订购码 (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF6G15L-500H |  (SOT539A) | sot539a_po | Bulk Pack | 量产 | Standard Marking | BLF6G15L-500H,112( 9340 652 23112 ) |
引脚配置信息
| Pin | Symbol | Description | 外形简图 | 图形符号 |
|---|---|---|---|---|
| 1 | D1 | drain1 |  |  |
| 2 | D2 | drain2 | ||
| 3 | G1 | gate1 | ||
| 4 | G2 | gate2 | ||
| 5 | S | source |
无铅环保信息
| 型号 | 可订购的器件编号 | RoHS / RHF | 无铅转换日期 | 潮湿敏感度等级 | MSL LF |
|---|---|---|---|---|---|
| BLF6G15L-500H | BLF6G15L-500H,112 |   | Always Pb-free | NA | NA |
文档资料
| 档案名称 | 标题 | 类型 | 格式 | 日期 |
|---|---|---|---|---|
| BLF6G15L-500H_6G15LS-500H (中文) | Power LDMOS transistor | Data sheet | 2013-07-12 | |
| AN10896 | Mounting and Soldering of RF transistors | Application note | 2015-03-24 | |
| fatigue_in_aluminum_bond_wires | Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
| NXP_RF_manual_19th_edition | RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 | Other type | 2015-05-19 | |
| BLF6G15L-500H_ADS-2009_Model | BLF6G15L-500H ADS-2009 Model | Simulation model | zip | 2013-06-20 |
| sot539a_po | flanged balanced ceramic package; 2 mounting holes; 4 leads | Outline drawing | 2010-04-06 | |
| SOT539A_112 | CDFM4; blister pack; standard product orientation 12NC ending 112 | Packing | 2012-12-03 |
订购信息
| 型号 | 订购码 (12NC) | 可订购的器件编号 |
|---|---|---|
| BLF6G15L-500H | 9340 652 23112 | BLF6G15L-500H,112 |
模型
| 标题 | 类型 | 日期 |
|---|---|---|
| BLF6G15L-500H ADS-2009 Model | Simulation model | 2013-06-20 |
- Power LDMOS transistor BLF6G15L_S_500H
- Power LDMOS transistor BLF6G15L_S_500H
- Power LDMOS transistor BLF6G15L_S_500H
- Mounting and Soldering of RF transistors aerospace_defense
- Fatigue in aluminum bond wires gan_devices
- RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
- flanged balanced ceramic package; 2 mounting holes; 4 leads BLU6H0410L_S_600P
- CDFM4; blister pack; standard product orientation 12NC ending 112 BLU6H0410L_S_600P
- BLF6G15L-500H ADS-2009 Model BLF6G15L_S_500H
