BLF6G21-10G：功率LDMOS晶体管 _ BDTIC 中国领先电子元器件代理商

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BLF6G21-10G：功率LDMOS晶体管

10 W LDMOS功率晶体管，适合HF至2200 MHz频率范围的基站应用。

特性和优势

方便的功率控制
集成ESD保护
极佳的强度
高效率
极佳的热稳定性
无适合宽带操作的内部匹配。
符合欧盟2002/95/EC危害性物质限制(RoHS)指令

应用

适用于GSM、PHS、EDGE、CDMA和W-CDMA基站的RF功率放大器
广播驱动器
适合HF至2200 MHz频率范围内应用的RF功率放大器

产品图片

关键参数

Symbol	Parameter	Conditions	Min	Typ/Nom	Max	Unit
f_range	frequency range		1		2200	MHz
P_L(1dB)	nominal output power at 1 dB gain compression			10		W
G_p	power gain	P_L(AV) = 0.7 W; V_DS = 28 V ^[0]		18.5		dB
η_D	drain efficiency	P_L(AV) = 0.7 W; V_DS = 28 V; 2110 MHz < f < 2170 MHz; I_Dq = 100 mA ^[0]		15		%
P_L(AV)	average output power			0.7		W
ACPR	adjacent channel power ratio	P_L(AV) = 0.7 W; V_DS = 28 V; 2110 MHz < f < 2170 MHz; I_Dq = 100 A ^[0]		-50		dBc

封装与包装

型号	封装	Outline version	Reflow-/Wave soldering	包装	产品状态	标示	可订购的器件编号, (订购码 (12NC))
BLF6G21-10G	CDIP2 (SOT538A)	sot538a_po		Reel 11¼" Q1/T1 in LargePack	量产	Standard Marking	BLF6G21-10G,135( 9340 634 36135 )
BLF6G21-10G	CDIP2 (SOT538A)	sot538a_po		Bulk Pack	量产	Standard Marking	BLF6G21-10G,112( 9340 634 36112 )

引脚配置信息

Pin	Symbol	Description	外形简图	图形符号
1	D	drain
2	G	gate
3	S	source

无铅环保信息

型号	可订购的器件编号	RoHS / RHF	无铅转换日期	潮湿敏感度等级	MSL LF
BLF6G21-10G	BLF6G21-10G,135		Always Pb-free
BLF6G21-10G	BLF6G21-10G,112		Always Pb-free	NA	NA

文档资料

档案名称	标题	类型	格式	日期
BLF6G21-10G (中文)	Power LDMOS transistor	Data sheet	pdf	2013-04-15
AN10896	Mounting and Soldering of RF transistors	Application note	pdf	2015-03-24
75017347	Enabling the Mobile Experience	Brochure	pdf	2013-02-05
fatigue_in_aluminum_bond_wires	Fatigue in aluminum bond wires	Mounting and soldering	pdf	2009-10-08
NXP_RF_manual_19th_edition	RF Manual 19th edition: Application and design manual for High Performance RF products May 2015	Other type	pdf	2015-05-19
BLF6G21-10G_ADS-2009_Model	BLF6G21-10G ADS-2009 Model	Simulation model	zip	2013-02-28
NXP_RFpower_Lib_V09p0	RF Power Model Library for Microwave Office®	Simulation model	zip	2014-11-11
NXP_RFpower_Manual_MWO_20141111	RF Power Model Library Manual and Installation Instructions for Microwave Office®	Simulation model	pdf	2014-11-11
NXP_RFPower_Simulation_Example	RF Power Simulation Example for Microwave Office®	Simulation model	zip	2012-06-11
BLF6G21-10G_ADS-2011_Model	BLF6G21-10G ADS-2011 Model	Simulation model	zip	2014-04-11
SOT538A_135	Tape reel SMD; standard product orientation 12NC ending 135	Packing	pdf	2012-12-03
SOT538A_112	CDIP2; blister pack; standard product orientation 12NC ending 112	Packing	pdf	2012-12-03
sot538a_po	ceramic surface mounted package; 2 leads	Outline drawing	pdf	2013-02-14

订购信息

型号	订购码 (12NC)	可订购的器件编号
BLF6G21-10G	9340 634 36135	BLF6G21-10G,135
BLF6G21-10G	9340 634 36112	BLF6G21-10G,112

模型

标题	类型	日期
BLF6G21-10G ADS-2009 Model	Simulation model	2013-02-28
RF Power Model Library for Microwave Office®	Simulation model	2014-11-11
RF Power Model Library Manual and Installation Instructions for Microwave Office®	Simulation model	2014-11-11
RF Power Simulation Example for Microwave Office®	Simulation model	2012-06-11
BLF6G21-10G ADS-2011 Model	Simulation model	2014-04-11

Power LDMOS transistor BLF6G21-10G

Mounting and Soldering of RF transistors aerospace_defense

Enabling the Mobile Experience rf

Fatigue in aluminum bond wires gan_devices

RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf

Tape reel SMD; standard product orientation 12NC ending 135 BLF6G21-10G

CDIP2; blister pack; standard product orientation 12NC ending 112 BLF6G21-10G

ceramic surface mounted package; 2 leads BLF6G21-10G

BLF6G21-10G ADS-2009 Model BLF6G21-10G

RF Power Model Library for Microwave Office® CLF1G0060_S_30

RF Power Model Library Manual and Installation Instructions for Microwave Office® CLF1G0060_S_30

RF Power Simulation Example for Microwave Office® CLF1G0060_S_30

BLF6G21-10G ADS-2011 Model BLF6G21-10G

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