BLF7G15LS-200：功率LDMOS晶体管 _ BDTIC 中国领先电子元器件代理商

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BLF7G15LS-200：功率LDMOS晶体管

200 W LDMOS功率晶体管，适合1450 MHz至1550 MHz频率范围的基站应用。

特性和优势

针对低内存占用量设计，提供出色的预失真性能
内部匹配，便于使用
出色的耐用性
集成ESD保护
高效率
设计用于宽带操作（1450 MHz至1550 MHz）
低Rth，提供极佳的热稳定性
更低的输出电容，可增强Doherty应用中的性能
符合欧盟2002/95/EC危害性物质限制(RoHS)指令

应用

适合W-CDMA基站和多载波应用的RF功率放大器

产品图片

关键参数

Symbol	Parameter	Conditions	Min	Typ/Nom	Max	Unit
f_range	frequency range		1450		1550	MHz
P_L(1dB)	nominal output power at 1 dB gain compression			200		W
G_p	power gain	P_L(AV) = 50 W; V_DS = 28 V ^[0]	18.3	19.5		dB
RL_in	input return loss	P_L(AV) = 50 W; V_DS = 28 V; I_Dq = 1600 mA ^[0]		-8	-5.5	dB
η_D	drain efficiency	P_L(AV) = 50 W; V_DS = 28 V; 1476 MHz < f < 1511 MHz; I_Dq = 1600 mA ^[0]	27	29		%
P_L(AV)	average output power	^[0]		50		W
ACPR	adjacent channel power ratio	P_L(AV) = 50 W; V_DS = 28 V; 1476 MHz < f < 1511 MHz; I_Dq = 1600 mA ^[0]		-35	-33	dBc

封装与包装

型号	封装	Outline version	Reflow-/Wave soldering	包装	产品状态	标示	可订购的器件编号, (订购码 (12NC))
BLF7G15LS-200	(SOT502B)	sot502b_po		Reel 13" Q1/T1	量产	Standard Marking	BLF7G15LS-200,118( 9340 646 34118 )
BLF7G15LS-200	(SOT502B)	sot502b_po		Bulk Pack	量产	Standard Marking	BLF7G15LS-200,112( 9340 646 34112 )

引脚配置信息

Pin	Symbol	Description	外形简图	图形符号
1	D	drain
2	G	gate
3	S	source

无铅环保信息

型号	可订购的器件编号	RoHS / RHF	无铅转换日期	潮湿敏感度等级	MSL LF
BLF7G15LS-200	BLF7G15LS-200,118		Always Pb-free	NA	NA
BLF7G15LS-200	BLF7G15LS-200,112		Always Pb-free	NA	NA

文档资料

档案名称	标题	类型	格式	日期
BLF7G15LS-200 (中文)	Power LDMOS transistor	Data sheet	pdf	2011-07-22
AN10896	Mounting and Soldering of RF transistors	Application note	pdf	2015-03-24
75017347	Enabling the Mobile Experience	Brochure	pdf	2013-02-05
75017207	RF power transistor for leading performance in 1.5 GHz LTE basestations	Leaflet	pdf	2012-01-19
fatigue_in_aluminum_bond_wires	Fatigue in aluminum bond wires	Mounting and soldering	pdf	2009-10-08
NXP_RF_manual_19th_edition	RF Manual 19th edition: Application and design manual for High Performance RF products May 2015	Other type	pdf	2015-05-19
BLF7G15L-200_ADS-2009_Model	BLF7G15L-200 ADS-2009 Model	Simulation model	zip	2013-02-28
sot502b_po	earless flanged ceramic package; 2 leads	Outline drawing	pdf	2007-05-08
SOT502B_112	CDFM2; blister pack; standard product orientation 12NC ending 112	Packing	pdf	2012-12-03

订购信息

型号	订购码 (12NC)	可订购的器件编号
BLF7G15LS-200	9340 646 34118	BLF7G15LS-200,118
BLF7G15LS-200	9340 646 34112	BLF7G15LS-200,112

模型

标题	类型	日期
BLF7G15L-200 ADS-2009 Model	Simulation model	2013-02-28

Power LDMOS transistor BLF7G15LS-200

Mounting and Soldering of RF transistors aerospace_defense

Enabling the Mobile Experience rf

RF power transistor for leading performance in 1.5 GHz LTE basestations BLF7G15LS-200

Fatigue in aluminum bond wires gan_devices

RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf

earless flanged ceramic package; 2 leads BLS7G3135LS-200

CDFM2; blister pack; standard product orientation 12NC ending 112 BLS7G3135LS-200

BLF7G15L-200 ADS-2009 Model BLF7G15LS-200

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