BLF7G27L(S)-90P：功率LDMOS晶体管

90 W LDMOS功率晶体管，适用于2500 MHz至2700 MHz频率范围的基站应用。

特性和优势
    • 极佳的强度
    • 高效率
    • 低Rth提供极佳的热稳定性
    • 主要用于宽带操作（2500 MHz至2700 MHz）
    • 更低的输出电容提升了Doherty应用的性能
    • 主要用于降低记忆效应以提供极佳预失真能力
    • 内部匹配以方便使用
    • 集成ESD保护
    • 符合有害物质限制的Directive 2002/95/EC
应用
    • 适用于W-CDMA基站的RF功率放大器
    • 2500 MHz 至2700 MHz频率范围内的多载波应用
产品图片
关键参数
型号Package versionfrange [min] (MHz)frange [max] (MHz)PL(1dB) (W)VDS (V)η (%)GP (dB)Test signalProduct status
BLF7G27L-90PSOT1121A2500270090282918.5NCDMA/IS95; NCDMA/IS95Production
BLF7G27LS-90PSOT1121B2500270090282918.5NCDMA/IS95; NCDMA/IS95Production
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF7G27L-90P
CDFM4
(SOT1121A)		sot1121a_poReel 13" Q1/T1量产Standard MarkingBLF7G27L-90P,118( 9340 644 98118 )
Bulk Pack量产Standard MarkingBLF7G27L-90P,112( 9340 644 98112 )
BLF7G27LS-90P
CDFM4
(SOT1121B)		sot1121b_poReel 13" Q1/T1量产Standard MarkingBLF7G27LS-90P,118( 9340 644 99118 )
Bulk Pack量产Standard MarkingBLF7G27LS-90P,112( 9340 644 99112 )
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF7G27L-90PBLF7G27L-90P,118Always Pb-freeNANA
BLF7G27L-90PBLF7G27L-90P,112Always Pb-freeNANA
BLF7G27LS-90PBLF7G27LS-90P,118Always Pb-freeNANA
BLF7G27LS-90PBLF7G27LS-90P,112Always Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLF7G27L-90P_BLF7G27LS-90P (中文)Power LDMOS transistorData sheetpdf2011-11-10
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
NXP_RFpower_Lib_V09p0RF Power Model Library for Microwave Office®Simulation modelzip2014-11-11
NXP_RFpower_Manual_MWO_20141111RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation modelpdf2014-11-11
BLF7G27-90P_ADS-2009_ModelBLF7G27-90P ADS-2009 ModelSimulation modelzip2013-06-25
NXP_RFPower_Simulation_ExampleRF Power Simulation Example for Microwave Office®Simulation modelzip2012-06-11
BLF7G27-90P_ADS-2012_ModelBLF7G27-90P ADS-2012 ModelSimulation modelzip2014-05-02
sot1121b_poearless flanged ceramic package; 4 leadsOutline drawingpdf2012-06-08
sot1121a_poflanged LDMOST ceramic package; 2 mounting holes; 4 leadsOutline drawingpdf2010-04-06
订购信息
型号订购码 (12NC)可订购的器件编号
BLF7G27L-90P9340 644 98118BLF7G27L-90P,118
BLF7G27L-90P9340 644 98112BLF7G27L-90P,112
BLF7G27LS-90P9340 644 99118BLF7G27LS-90P,118
BLF7G27LS-90P9340 644 99112BLF7G27LS-90P,112
模型
标题类型日期
RF Power Model Library for Microwave Office®Simulation model2014-11-11
RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation model2014-11-11
BLF7G27-90P ADS-2009 ModelSimulation model2013-06-25
RF Power Simulation Example for Microwave Office®Simulation model2012-06-11
BLF7G27-90P ADS-2012 ModelSimulation model2014-05-02
Power LDMOS transistor BLF7G27L_S_90P
Power LDMOS transistor BLF7G27L_S_90P
Power LDMOS transistor BLF7G27L_S_90P
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
earless flanged ceramic package; 4 leads BLF9G38LS-90P
flanged LDMOST ceramic package; 2 mounting holes; 4 leads BLF884P_S
RF Power Model Library for Microwave Office® CLF1G0060_S_30
RF Power Model Library Manual and Installation Instructions for Microwave Office® CLF1G0060_S_30
BLF7G27-90P ADS-2009 Model BLF7G27L_S_90P
RF Power Simulation Example for Microwave Office® CLF1G0060_S_30
BLF7G27-90P ADS-2012 Model BLF7G27L_S_90P
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