BLF884P(S):UHF功率LDMOS晶体管

350 W LDMOS RF功率晶体管,用于广播发射器应用和工业应用。此器件极佳的强度使其成为数字和模拟发射器应用的理想选择。

特性和优势
    • 极佳的强度
    • 最佳热性能和可靠性,Rth(j-c) = 0.22 K/W
    • 高功率增益
    • 高效率
    • 主要用于宽带操作(470 MHz至860 MHz)
    • 内部输入匹配实现高增益和最佳宽带操作
    • 极佳的可靠性
    • 方便的功率控制
    • 符合RoHS的Directive 2002/95/EC
应用
    • UHF频段内的通信发射器应用
    • UHF频段内的工业应用
产品图片
关键参数
型号Package versionfrange [min] (MHz)frange [max] (MHz)PL(1dB) (W)VDS (V)η (%)GP (dB)Test signalProduct status
BLF884PSOT1121A470860300504621CW; CWProduction
BLF884PSSOT1121B470860300504621CW; CWProduction
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF884P
CDFM4
(SOT1121A)
sot1121a_poBulk Pack量产Standard MarkingBLF884P,112( 9340 656 55112 )
BLF884PS
CDFM4
(SOT1121B)
sot1121b_poBulk Pack量产Standard MarkingBLF884PS,112( 9340 660 77112 )
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF884PBLF884P,112Always Pb-freeNANA
BLF884PSBLF884PS,112Always Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLF884P_BLF884PS (中文)UHF power LDMOS transistorData sheetpdf2011-12-16
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
PCB_Design_BLF884P_BLF884PS_Data-sheetPCB Design BLF884P(S) (Data sheet)Design supportzip2012-04-23
75017197RF power UHF/DVB-T broadcasting at its bestLeafletpdf2011-11-29
75017312350 W LDMOS RF power transistor for digital & analog transmittersLeafletpdf2012-09-30
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
Application_Measurement_Report_BLF884P_470-860MHz_NA-1382Application Measurement Report BLF884P 470-860 MHz NA-1382Reportpdf2015-06-23
BLF884P_ADS-2009_ModelBLF884P ADS-2009 ModelSimulation modelzip2013-02-28
BLF884P_MWO_ModelBLF884P MWO ModelSimulation modelzip2013-11-21
75017452Ultra Wideband Doherty cuts Energy Consumption in HalfWhite paperpdf2013-06-05
sot1121b_poearless flanged ceramic package; 4 leadsOutline drawingpdf2012-06-08
sot1121a_poflanged LDMOST ceramic package; 2 mounting holes; 4 leadsOutline drawingpdf2010-04-06
订购信息
型号订购码 (12NC)可订购的器件编号
BLF884P9340 656 55112BLF884P,112
BLF884PS9340 660 77112BLF884PS,112
模型
标题类型日期
BLF884P ADS-2009 ModelSimulation model2013-02-28
BLF884P MWO ModelSimulation model2013-11-21
其它
标题类型日期
PCB Design BLF884P(S) (Data sheet)Design support2012-04-23
UHF power LDMOS transistor BLF884P_S
UHF power LDMOS transistor BLF884P_S
UHF power LDMOS transistor BLF884P_S
Mounting and Soldering of RF transistors aerospace_defense
RF power UHF/DVB-T broadcasting at its best BLF888D_S
350 W LDMOS RF power transistor for digital & analog transmitters BLF884P_S
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
Application Measurement Report BLF884P 470-860 MHz NA-1382 BLF884P_S
Ultra Wideband Doherty cuts Energy Consumption in Half BLF888D_S
earless flanged ceramic package; 4 leads BLF9G38LS-90P
flanged LDMOST ceramic package; 2 mounting holes; 4 leads BLF884P_S
BLF884P ADS-2009 Model BLF884P_S
BLF884P MWO Model BLF884P_S
PCB Design BLF884P(S) (Data sheet) BLF884P_S