BLF8G10LS-160V:功率LDMOS晶体管

160 W LDMOS功率晶体管,具有改进的视频带宽,适合925 MHz至960 MHz频率范围的基站应用。

特性和优势
    • 出色的耐用性
    • 高效率
    • 低Rth,提供极佳的热稳定性
    • 去耦引线,可改进视频带宽(典型值:60 MHz)
    • 设计用于宽带操作(925 MHz至960 MHzHz)
    • 更低的输出电容,可增强Doherty应用中的性能
    • 针对低内存占用量设计,提供出色的预失真性能
    • 内部匹配,便于使用
    • 集成式ESD保护
    • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
应用
    • 适用于W-CDMA基站的RF功率放大器
    • 925 MHz至960 MHz频率范围内的多载波应用
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range925960MHz
PL(1dB)nominal output power at 1 dB gain compression160W
Gppower gainPL(AV) = 35 W; VDS = 30 V18.419.9dB
RLininput return lossPL(AV) = 35 W; VDS = 30 V; IDq = 1100 mA-15-10dB
ηDdrain efficiencyPL(AV) = 35 W; VDS = 30 V; 925 MHz ≤ f ≤ 960 MHz; IDq = 1100 mA2730%
ACPRadjacent channel power ratioPL(AV) = 35 W; VDS = 30 V; 925 MHz ≤ f ≤ 960 MHz; IDq = 1100 mA-38-32.5dBc
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF8G10LS-160V
CDFM6
(SOT1244B)
sot1244b_poReel 13" Q1/T1量产Standard MarkingBLF8G10LS-160V,118( 9340 664 09118 )
Bulk Pack量产Standard MarkingBLF8G10LS-160V,112( 9340 664 09112 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1Ddrain
2Ggate
3Ssource
4d.ldecoupling lead
5d.ldecoupling lead
6n.cnot connected
7n.cnot connected
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF8G10LS-160VBLF8G10LS-160V,118Always Pb-free11
BLF8G10LS-160VBLF8G10LS-160V,112Always Pb-free11
文档资料
档案名称标题类型格式日期
BLF8G10LS-160V (中文)Power LDMOS transistorData sheetpdf2012-10-24
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLF8G10LS-160V_Data-sheetPCB Design BLF8G10LS-160V (Data sheet)Design supportzip2012-10-09
75017604Gen8: the latest LDMOS RF power portfolio for wireless infrastructuresLeafletpdf2014-09-04
75017398Extended video bandwidth with Doherty efficiencyLeafletpdf2013-03-21
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
Factsheet_Gen8_LDMOS_RF_pt_with_VBWFactsheet Gen8 LDMOS RF power transistor with Video BandwidthOther typepdf2012-10-23
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
BLF8G10LS-160V_ADS-2009_ModelBLF8G10LS-160V ADS-2009 ModelSimulation modelzip2013-08-01
BLF8G10LS-160V_ADS-2012_ModelBLF8G10LS-160V ADS-2012 ModelSimulation modelzip2014-05-02
sot1244b_poearless flanged ceramic package; 6 leadsOutline drawingpdf2012-05-15
订购信息
型号订购码 (12NC)可订购的器件编号
BLF8G10LS-160V9340 664 09118BLF8G10LS-160V,118
BLF8G10LS-160V9340 664 09112BLF8G10LS-160V,112
模型
标题类型日期
BLF8G10LS-160V ADS-2009 ModelSimulation model2013-08-01
BLF8G10LS-160V ADS-2012 ModelSimulation model2014-05-02
其它
标题类型日期
PCB Design BLF8G10LS-160V (Data sheet)Design support2012-10-09
Power LDMOS transistor BLF8G10LS-160V
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Gen8: the latest LDMOS RF power portfolio for wireless infrastructures base_stations
Extended video bandwidth with Doherty efficiency base_stations
Fatigue in aluminum bond wires gan_devices
Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth BLF8G38LS-75V
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
earless flanged ceramic package; 6 leads BLF8G27LS_150_G_V
BLF8G10LS-160V ADS-2009 Model BLF8G10LS-160V
BLF8G10LS-160V ADS-2012 Model BLF8G10LS-160V
PCB Design BLF8G10LS-160V (Data sheet) BLF8G10LS-160V