BLF8G10L(S)-160：功率LDMOS晶体管

160 W LDMOS功率晶体管，适用于920 MHz至960 MHz频率范围的基站应用。

特性和优势
    • 极佳的强度
    • 高效率
    • 低Rth提供极佳的热稳定性
    • 主要用于宽带操作（920 MHz至960 MHz）
    • 更低的输出电容提升了Doherty应用的性能
    • 主要用于降低记忆效应以提供极佳预失真能力
    • 内部匹配以方便使用
    • 集成ESD保护
    • 符合有害物质限制(RoHS) Directive 2002/95/EC
应用
    • W-CDMA基站RF功率放大器
    • 920 MHz 至960 MHz频率范围内的多载波应用
产品图片
关键参数
型号Package versionfrange [min] (MHz)frange [max] (MHz)PL(1dB) (W)VDS (V)η (%)GP (dB)Test signalProduct status
BLF8G10L-160SOT502A920960160302919.72-c WCDMA; 2-c WCDMAProduction
BLF8G10LS-160SOT502B920960160302919.72-c WCDMA; 2-c WCDMAProduction
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF8G10L-160

(SOT502A)		sot502a_poReel 13" Q1/T1量产Standard MarkingBLF8G10L-160,118( 9340 659 07118 )
Bulk Pack量产Standard MarkingBLF8G10L-160,112( 9340 659 07112 )
BLF8G10LS-160

(SOT502B)		sot502b_poReel 13" Q1/T1量产Standard MarkingBLF8G10LS-160,118( 9340 659 08118 )
Bulk Pack量产Standard MarkingBLF8G10LS-160,112( 9340 659 08112 )
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF8G10L-160BLF8G10L-160,118Always Pb-freeNANA
BLF8G10L-160BLF8G10L-160,112Always Pb-freeNANA
BLF8G10LS-160BLF8G10LS-160,118Always Pb-freeNANA
BLF8G10LS-160BLF8G10LS-160,112Always Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLF8G10L-160_8G10LS-160 (中文)Power LDMOS transistorData sheetpdf2012-02-16
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLF8G10L-160_8G10LS-160_Data-sheetPCB Design BLF8G10L(S)-160 (Data sheet)Design supportzip2012-02-24
75017604Gen8: the latest LDMOS RF power portfolio for wireless infrastructuresLeafletpdf2014-09-04
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
BLF8G10LS-160_ADS-2011_ModelBLF8G10LS-160 ADS-2011 ModelSimulation modelzip2013-06-11
sot502b_poearless flanged ceramic package; 2 leadsOutline drawingpdf2007-05-08
SOT502B_112CDFM2; blister pack; standard product orientation 12NC ending 112Packingpdf2012-12-03
sot502a_poflanged ceramic package; 2 mounting holes; 2 leadsOutline drawingpdf2009-10-08
SOT502A_112CDFM2; blister pack; standard product orientation 12NC ending 112Packingpdf2012-11-30
SOT502A_135Tape reel SMD; standard product orientation 12NC ending 135Packingpdf2012-12-03
订购信息
型号订购码 (12NC)可订购的器件编号
BLF8G10L-1609340 659 07118BLF8G10L-160,118
BLF8G10L-1609340 659 07112BLF8G10L-160,112
BLF8G10LS-1609340 659 08118BLF8G10LS-160,118
BLF8G10LS-1609340 659 08112BLF8G10LS-160,112
模型
标题类型日期
BLF8G10LS-160 ADS-2011 ModelSimulation model2013-06-11
其它
标题类型日期
PCB Design BLF8G10L(S)-160 (Data sheet)Design support2012-02-24
Power LDMOS transistor BLF8G10L_S_160
Power LDMOS transistor BLF8G10L_S_160
Power LDMOS transistor BLF8G10L_S_160
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Gen8: the latest LDMOS RF power portfolio for wireless infrastructures base_stations
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
earless flanged ceramic package; 2 leads BLS7G3135LS-200
CDFM2; blister pack; standard product orientation 12NC ending 112 BLS7G3135LS-200
flanged ceramic package; 2 mounting holes; 2 leads BLS7G2325L-105
CDFM2; blister pack; standard product orientation 12NC ending 112 BLS7G2325L-105
Tape reel SMD; standard product orientation 12NC ending 135 BLS6G3135_S_120
BLF8G10LS-160 ADS-2011 Model BLF8G10L_S_160
PCB Design BLF8G10L(S)-160 (Data sheet) BLF8G10L_S_160
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