BLF8G20LS-160V:Power LDMOS transistor

160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.

特性和优势
    • Excellent ruggedness
    • High efficiency
    • Low thermal resistance providing excellent thermal stability
    • Designed for broadband operation
    • Lower output capacitance for improved performance in Doherty applications
    • Designed for low memory effects providing excellent pre-distortability
    • Internally matched for ease of use
    • Integrated ESD protection
    • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
应用
    • RF power amplifiers for multi systems base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range18002000MHz
PL(1dB)nominal output power at 1 dB gain compression160W
Gppower gainPL(AV) = 35.5 W; VDS = 28 V1920dB
RLininput return lossPL(AV) = 35.5 W; VDS = 28 V; IDq = 800 mA-10-7dB
ηDdrain efficiencyPL(AV) = 35.5 W; VDS = 28 V; 1805 MHz ≤ f ≤ 1880 MHz; IDq = 800 mA3034%
ACPRadjacent channel power ratioPL(AV) = 35.5 W; VDS = 28 V; 1805 MHz ≤ f ≤ 1880 MHz; IDq = 800 mA-29-25dBc
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF8G20LS-160V
CDFM6
(SOT1239B)
sot1239b_poReel 13" Q1/T1量产Standard MarkingBLF8G20LS-160VJ( 9340 685 36118 )
Bulk Pack量产Standard MarkingBLF8G20LS-160VU( 9340 685 36112 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1Ddrain
2Ggate
3Ssource
4D.Ldecoupling lead
5D.Ldecoupling lead
6n.cnot connected
7n.cnot connected
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF8G20LS-160VBLF8G20LS-160VJAlways Pb-freeNANA
BLF8G20LS-160VBLF8G20LS-160VUAlways Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLF8G20LS-160V (中文)Power LDMOS transistorData sheetpdf2014-06-24
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLF8G20LS-160V_Data-sheetPCB Design BLF8G20LS-160V (Data sheet)Design supportzip2014-06-06
75017604Gen8: the latest LDMOS RF power portfolio for wireless infrastructuresLeafletpdf2014-09-04
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
Factsheet_Gen8_LDMOS_RF_pt_with_VBWFactsheet Gen8 LDMOS RF power transistor with Video BandwidthOther typepdf2012-10-23
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
sot1239b_poearless flanged LDMOST ceramic package; 6 leadsOutline drawingpdf2013-06-13
订购信息
型号订购码 (12NC)可订购的器件编号
BLF8G20LS-160V9340 685 36118BLF8G20LS-160VJ
BLF8G20LS-160V9340 685 36112BLF8G20LS-160VU
其它
标题类型日期
PCB Design BLF8G20LS-160V (Data sheet)Design support2014-06-06
Power LDMOS transistor BLF8G20LS-160V
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Gen8: the latest LDMOS RF power portfolio for wireless infrastructures base_stations
Fatigue in aluminum bond wires gan_devices
Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth BLF8G38LS-75V
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
earless flanged LDMOST ceramic package; 6 leads BLF8G38LS-75V
PCB Design BLF8G20LS-160V (Data sheet) BLF8G20LS-160V