BLF8G20LS-230V:功率LDMOS晶体管

230 W LDMOS功率晶体管,具有改进的视频带宽,适合1800 MHz至2000 MHz频率范围的基站应用。

特性和优势
    • 出色的耐用性
    • 高效率
    • 低热阻,提供极佳的热稳定性
    • 设计用于宽带操作
    • 更低的输出电容,可增强Doherty应用中的性能
    • 针对低内存占用量设计,提供出色的预失真性能
    • 内部匹配,便于使用
    • 集成式ESD保护
    • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
应用
    • 适合1800 MHz至2000 MHz频率范围内多标准和多载波应用的RF功率放大器
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range18002000MHz
PL(1dB)nominal output power at 1 dB gain compression230W
Gppower gainPL(AV) = 55 W; VDS = 28 V16.818dB
RLininput return lossPL(AV) = 55 W; VDS = 28 V; IDq = 1800 mA-10-6dB
ηDdrain efficiencyPL(AV) = 55 W; VDS = 28 V; 1805 MHz ≤ f ≤ 1880 MHz; IDq = 1800 mA2731.7%
ACPRadjacent channel power ratioPL(AV) = 55 W; VDS = 28 V; 1805 MHz ≤ f ≤ 1880 MHz; IDq = 1800 mA-29-24dBc
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF8G20LS-230V
CDFM6
(SOT1239B)
sot1239b_poReel 13" Q1/T1量产Standard MarkingBLF8G20LS-230VJ( 9340 679 61118 )
Bulk Pack量产Standard MarkingBLF8G20LS-230VU( 9340 679 61112 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1Ddrain
2Ggate
3Ssource
4D.Ldecoupling lead
5D.Ldecoupling lead
6n.cnot connected
7n.cnot connected
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF8G20LS-230VBLF8G20LS-230VJAlways Pb-freeNA
BLF8G20LS-230VBLF8G20LS-230VUAlways Pb-freeNA
文档资料
档案名称标题类型格式日期
BLF8G20LS-230V (中文)Power LDMOS transistorData sheetpdf2014-02-21
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLF8G20LS-230V_Data-sheetPCB Design BLF8G20LS-230V (Data sheet)Design supportzip2013-12-02
75017604Gen8: the latest LDMOS RF power portfolio for wireless infrastructuresLeafletpdf2014-09-04
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
Factsheet_Gen8_LDMOS_RF_pt_with_VBWFactsheet Gen8 LDMOS RF power transistor with Video BandwidthOther typepdf2012-10-23
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
BLF8G20LS-230V_ADS-2009_ModelBLF8G20LS-230V ADS-2009 ModelSimulation modelzip2013-11-22
sot1239b_poearless flanged LDMOST ceramic package; 6 leadsOutline drawingpdf2013-06-13
订购信息
型号订购码 (12NC)可订购的器件编号
BLF8G20LS-230V9340 679 61118BLF8G20LS-230VJ
BLF8G20LS-230V9340 679 61112BLF8G20LS-230VU
模型
标题类型日期
BLF8G20LS-230V ADS-2009 ModelSimulation model2013-11-22
其它
标题类型日期
PCB Design BLF8G20LS-230V (Data sheet)Design support2013-12-02
Power LDMOS transistor BLF8G20LS-230V
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Gen8: the latest LDMOS RF power portfolio for wireless infrastructures base_stations
Fatigue in aluminum bond wires gan_devices
Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth BLF8G38LS-75V
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
earless flanged LDMOST ceramic package; 6 leads BLF8G38LS-75V
BLF8G20LS-230V ADS-2009 Model BLF8G20LS-230V
PCB Design BLF8G20LS-230V (Data sheet) BLF8G20LS-230V