BLF8G22LS-140:功率LDMOS晶体管

140 W LDMOS功率晶体管,适合2000 MHz至2200 MHz频率范围的基站应用。

特性和优势
    • 出色的耐用性
    • 高效率
    • 低Rth,提供极佳的热稳定性
    • 设计用于宽带操作(2000 MHz至2200 MHz)
    • 更低的输出电容,可增强Doherty应用中的性能
    • 针对低内存占用量设计,提供出色的数字预失真性能
    • 内部匹配,便于使用
    • 集成式ESD保护
    • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
应用
    • 适用于W-CDMA基站的RF功率放大器
    • 2000 MHz至2200 MHz频率范围内的多载波应用
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range20002200MHz
PL(1dB)nominal output power at 1 dB gain compression140W
Gppower gainPL(AV) = 33 W; VDS = 28 V17.318.5dB
RLininput return lossPL(AV) = 33 W; VDS = 28 V; IDq = 900 mA-10-6dB
ηDdrain efficiencyPL(AV) = 33 W; VDS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; IDq = 900 mA2932.5%
ACPRadjacent channel power ratioPL(AV) = 33 W; VDS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; IDq = 900 mA-31-27dBc
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF8G22LS-140

(SOT502B)
sot502b_poReel 13" Q1/T1量产Standard MarkingBLF8G22LS-140J( 9340 674 54118 )
Bulk Pack量产Standard MarkingBLF8G22LS-140U( 9340 674 54112 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1Ddrain
2Ggate
3Ssource
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF8G22LS-140BLF8G22LS-140JAlways Pb-freeNANA
BLF8G22LS-140BLF8G22LS-140UAlways Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLF8G22LS-140 (中文)Power LDMOS transistorData sheetpdf2013-04-10
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLF8G22LS-140_Data-sheetPCB Design BLF8G22LS-140 (Data sheet)Design supportzip2013-03-04
75017604Gen8: the latest LDMOS RF power portfolio for wireless infrastructuresLeafletpdf2014-09-04
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
BLF8G22LS-140_ADS-2009_ModelBLF8G22LS-140 ADS-2009 ModelSimulation modelzip2013-08-01
BLF8G22LS-140_ADS-2012_ModelBLF8G22LS-140 ADS-2012 ModelSimulation modelzip2014-05-02
sot502b_poearless flanged ceramic package; 2 leadsOutline drawingpdf2007-05-08
SOT502B_112CDFM2; blister pack; standard product orientation 12NC ending 112Packingpdf2012-12-03
订购信息
型号订购码 (12NC)可订购的器件编号
BLF8G22LS-1409340 674 54118BLF8G22LS-140J
BLF8G22LS-1409340 674 54112BLF8G22LS-140U
模型
标题类型日期
BLF8G22LS-140 ADS-2009 ModelSimulation model2013-08-01
BLF8G22LS-140 ADS-2012 ModelSimulation model2014-05-02
其它
标题类型日期
PCB Design BLF8G22LS-140 (Data sheet)Design support2013-03-04
Power LDMOS transistor BLF8G22LS-140
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Gen8: the latest LDMOS RF power portfolio for wireless infrastructures base_stations
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
earless flanged ceramic package; 2 leads BLS7G3135LS-200
CDFM2; blister pack; standard product orientation 12NC ending 112 BLS7G3135LS-200
BLF8G22LS-140 ADS-2009 Model BLF8G22LS-140
BLF8G22LS-140 ADS-2012 Model BLF8G22LS-140
PCB Design BLF8G22LS-140 (Data sheet) BLF8G22LS-140