BLF8G22LS-220:功率LDMOS晶体管

220 W LDMOS功率晶体管,适用于2110 MHz至2170 MHz频率范围的基站应用。

特性和优势
    • 极佳的强度
    • 高效率
    • 低Rth提供极佳的热稳定性
    • 主要用于降低记忆效应以提供极佳预失真能力
    • 内部匹配以方便使用
    • 集成ESD保护
    • 符合有害物质限制(RoHS)的Directive 2002/95/EC
应用
    • 2110 MHz至2170 MHz频率范围内W-CDMA基站和多载波应用的RF功率放大器
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range21102170MHz
PL(1dB)nominal output power at 1 dB gain compression220W
Gppower gainPL(AV) = 55 W; VDS = 28 V15.817dB
RLininput return lossPL(AV) = 55 W; VDS = 28 V; IDq = 1620 mA-12-6dB
ηDdrain efficiencyPL(AV) = 55 W; VDS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; IDq = 1620 mA2833%
ACPR5Madjacent channel power ratio (5 MHz)PL(AV) = 55 W; VDS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; IDq = 1620 mA-30-24dBc
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF8G22LS-220

(SOT502B)
sot502b_poReel 13" Q1/T1量产Standard MarkingBLF8G22LS-220J( 9340 675 31118 )
Bulk Pack量产Standard MarkingBLF8G22LS-220U( 9340 675 31112 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1Ddrain
2Ggate
3Ssource
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF8G22LS-220BLF8G22LS-220JAlways Pb-freeNANA
BLF8G22LS-220BLF8G22LS-220UAlways Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLF8G22LS-220 (中文)Power LDMOS transistorData sheetpdf2013-05-30
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLF8G22LS-220_Data-sheetPCB Design BLF8G22LS-220 (Data sheet)Design supportzip2013-03-21
75017604Gen8: the latest LDMOS RF power portfolio for wireless infrastructuresLeafletpdf2014-09-04
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
BLF8G22LS-220_ADS-2009_ModelBLF8G22LS-220 ADS-2009 ModelSimulation modelzip2013-08-01
sot502b_poearless flanged ceramic package; 2 leadsOutline drawingpdf2007-05-08
SOT502B_112CDFM2; blister pack; standard product orientation 12NC ending 112Packingpdf2012-12-03
订购信息
型号订购码 (12NC)可订购的器件编号
BLF8G22LS-2209340 675 31118BLF8G22LS-220J
BLF8G22LS-2209340 675 31112BLF8G22LS-220U
模型
标题类型日期
BLF8G22LS-220 ADS-2009 ModelSimulation model2013-08-01
其它
标题类型日期
PCB Design BLF8G22LS-220 (Data sheet)Design support2013-03-21
Power LDMOS transistor BLF8G22LS-220
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Gen8: the latest LDMOS RF power portfolio for wireless infrastructures base_stations
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
earless flanged ceramic package; 2 leads BLS7G3135LS-200
CDFM2; blister pack; standard product orientation 12NC ending 112 BLS7G3135LS-200
BLF8G22LS-220 ADS-2009 Model BLF8G22LS-220
PCB Design BLF8G22LS-220 (Data sheet) BLF8G22LS-220