BLF8G22LS-200(G)V:功率LDMOS晶体管

200 W LDMOS功率晶体管,适用于2110 MHz至2170 MHz频率范围的基站应用。

特性和优势
    • 极佳的强度
    • 高效率
    • 低Rth提供极佳的热稳定性
    • 主要用于宽带操作
    • 更低的输出电容提升了Doherty应用的性能
    • 主要用于降低记忆效应以提供极佳预失真能力
    • 内部匹配以方便使用
    • 集成ESD保护
    • 符合有害物质限制(RoHS) Directive 2002/95/EC
    • 鸥翼型优化设计
应用
    • 基站RF功率放大器
    • 2110 MHz 至2170 MHz频率范围内的多载波应用
产品图片
关键参数
型号Package versionfrange [min] (MHz)frange [max] (MHz)PL(1dB) (W)VDS (V)η (%)GP (dB)Test signalProduct status
BLF8G22LS-200GVSOT1244C211021702002829192-c WCDMA; 2-c WCDMAProduction
BLF8G22LS-200VSOT1244B211021702002829192-c WCDMA; 2-c WCDMAProduction
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF8G22LS-200GV
CDFM6
(SOT1244C)
sot1244c_poHorizontal, Rail Pack量产Standard MarkingBLF8G22LS-200GV,12( 9340 669 11127 )
Reel 13" Q1/T1量产Standard MarkingBLF8G22LS-200GVJ( 9340 669 11118 )
BLF8G22LS-200V
CDFM6
(SOT1244B)
sot1244b_poReel 13" Q1/T1量产Standard MarkingBLF8G22LS-200V,118( 9340 667 58118 )
Bulk Pack量产Standard MarkingBLF8G22LS-200V,112( 9340 667 58112 )
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF8G22LS-200GVBLF8G22LS-200GV,12Always Pb-free11
BLF8G22LS-200GVBLF8G22LS-200GVJAlways Pb-free11
BLF8G22LS-200VBLF8G22LS-200V,118Always Pb-freeNANA
BLF8G22LS-200VBLF8G22LS-200V,112Always Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLF8G22LS-200V_8G22LS-200GV (中文)Power LDMOS transistorData sheetpdf2012-12-10
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLF8G22LS-200V_8G22LS-200GV_Data-sheetPCB Design BLF8G22LS-200(G)V (Data sheet)Design supportzip2012-09-28
75017604Gen8: the latest LDMOS RF power portfolio for wireless infrastructuresLeafletpdf2014-09-04
75017398Extended video bandwidth with Doherty efficiencyLeafletpdf2013-03-21
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
Factsheet_Gen8_LDMOS_RF_pt_with_VBWFactsheet Gen8 LDMOS RF power transistor with Video BandwidthOther typepdf2012-10-23
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
BLF8G22LS-200GV_ADS-2009_ModelBLF8G22LS-200GV ADS-2009 ModelSimulation modelzip2013-08-02
sot1244b_poearless flanged ceramic package; 6 leadsOutline drawingpdf2012-05-15
sot1244c_poearless flanged ceramic package; 6 leadsOutline drawingpdf2012-05-14
订购信息
型号订购码 (12NC)可订购的器件编号
BLF8G22LS-200GV9340 669 11127BLF8G22LS-200GV,12
BLF8G22LS-200GV9340 669 11118BLF8G22LS-200GVJ
BLF8G22LS-200V9340 667 58118BLF8G22LS-200V,118
BLF8G22LS-200V9340 667 58112BLF8G22LS-200V,112
模型
标题类型日期
BLF8G22LS-200GV ADS-2009 ModelSimulation model2013-08-02
其它
标题类型日期
PCB Design BLF8G22LS-200(G)V (Data sheet)Design support2012-09-28
Power LDMOS transistor BLF8G22LS_200_G_V
Power LDMOS transistor BLF8G22LS_200_G_V
Power LDMOS transistor BLF8G22LS_200_G_V
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Gen8: the latest LDMOS RF power portfolio for wireless infrastructures base_stations
Extended video bandwidth with Doherty efficiency base_stations
Fatigue in aluminum bond wires gan_devices
Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth BLF8G38LS-75V
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
earless flanged ceramic package; 6 leads BLF8G27LS_150_G_V
earless flanged ceramic package; 6 leads BLF8G27LS_150_G_V
BLF8G22LS-200GV ADS-2009 Model BLF8G22LS_200_G_V
PCB Design BLF8G22LS-200(G)V (Data sheet) BLF8G22LS_200_G_V