BLF8G27LS-100P:功率LDMOS晶体管

100 W LDMOS功率晶体管,适合2500 MHz至2700 MHz频率范围的基站应用。

特性和优势
    • 出色的耐用性
    • 高效率
    • 低Rth,提供极佳的热稳定性
    • 设计用于宽带操作(2500 MHz至2700 MHz)
    • 更低的输出电容,可增强Doherty应用中的性能
    • 针对低内存占用量设计,提供出色的预失真性能
    • 内部匹配,便于使用
    • 集成式ESD保护
    • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
应用
    • 适用于W-CDMA基站的RF功率放大器
    • 2500 MHz至2700 MHz频率范围内的多载波应用
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range25002700MHz
PL(1dB)nominal output power at 1 dB gain compression100W
Gppower gainPL(AV) = 25 W; VDS = 28 V16.818dB
RLininput return lossPL(AV) = 25 W; VDS = 28 V; IDq = 860 mA-12-6dB
ηDdrain efficiencyPL(AV) = 25 W; VDS = 28 V; 2500 MHz ≤ f ≤ 2700 MHz; IDq = 860 mA2833%
ACPR5Madjacent channel power ratio (5 MHz)PL(AV) = 25 W; VDS = 28 V; 2500 MHz ≤ f ≤ 2700 MHz; IDq = 860 mA-35-30dBc
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF8G27LS-100P
CDFM4
(SOT1121B)
sot1121b_poReel 13" Q1/T1量产Standard MarkingBLF8G27LS-100PJ( 9340 674 66118 )
Bulk Pack量产Standard MarkingBLF8G27LS-100PU( 9340 674 66112 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1D1drain1
2D2drain2
3G1gate1
4G2gate2
5Ssource
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF8G27LS-100PBLF8G27LS-100PJAlways Pb-free11
BLF8G27LS-100PBLF8G27LS-100PUAlways Pb-free11
文档资料
档案名称标题类型格式日期
BLF8G27LS-100P (中文)Power LDMOS transistorData sheetpdf2013-04-15
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLF8G27LS-100P_Data-sheetPCB Design BLF8G27LS-100P (Data sheet)Design supportzip2013-03-26
75017604Gen8: the latest LDMOS RF power portfolio for wireless infrastructuresLeafletpdf2014-09-04
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
sot1121b_poearless flanged ceramic package; 4 leadsOutline drawingpdf2012-06-08
订购信息
型号订购码 (12NC)可订购的器件编号
BLF8G27LS-100P9340 674 66118BLF8G27LS-100PJ
BLF8G27LS-100P9340 674 66112BLF8G27LS-100PU
其它
标题类型日期
PCB Design BLF8G27LS-100P (Data sheet)Design support2013-03-26
Power LDMOS transistor BLF8G27LS-100P
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Gen8: the latest LDMOS RF power portfolio for wireless infrastructures base_stations
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
earless flanged ceramic package; 4 leads BLF9G38LS-90P
PCB Design BLF8G27LS-100P (Data sheet) BLF8G27LS-100P