BLL6H0514-25:LDMOS驱动器晶体管

25 W LDMOS晶体管主要用于0.5 GHz至1.4 GHz范围的脉冲应用。

特性和优势
    • 方便的功率控制
    • 集成ESD保护
    • 高度灵活的脉冲格式
    • 极佳的强度
    • 高效率
    • 极佳的热稳定性
    • 主要用于宽带操作(0.5 GHz至1.4 GHz)
    • 符合有害物质限制的Directive 2002/95/EC
应用
    • 适用于1.2 GHz至1.4 GHz频率范围内脉冲应用的放大器
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range5001400MHz
PL(1dB)nominal output power at 1 dB gain compression25W
Gppower gainPL = 25 W; VDS = 50 V19dB
RLininput return lossPL = 25 W; VDS = 50 V; IDq = 50 mA-10dB
ηDdrain efficiencyPL = 25 W; VDS = 50 V; 1200 MHz ≤ f ≤ 1400 MHz; IDq = 50 mA50%
PLoutput powertp = 300 µs; δ = 0.1  25W
Pdroop(pulse)pulse droop powerPL = 25 W0.05dB
trrise timePL = 25 W; VDS = 50 V8ns
tffall timePL = 25 W; VDS = 50 V6ns
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLL6H0514-25

(SOT467C)
sot467c_poBulk Pack量产Standard MarkingBLL6H0514-25,112( 9340 634 48112 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1Ddrain
2Ggate
3Ssource
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLL6H0514-25BLL6H0514-25,112Always Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLL6H0514-25 (中文)LDMOS driver transistorData sheetpdf2010-03-30
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
PCB_Design_BLL6H0514-25_Data-sheetPCB Design BLL6H0514-25 (Data sheet)Design supportzip2012-02-24
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
high_power_rf_ldmos_transistors_for_avionics_applicationsHigh Power RF LDMOS Transistors for Avionics ApplicationsOther typepdf2009-01-13
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
Application_Measurement_Report_BLL6H0514-25_1010-1050MHz_CA-058-12Application Measurement Report BLL6H0514-25 1010-1050 MHz CA-058-12Reportpdf2015-06-23
BLL6H0514-25_ADS-2009_ModelBLL6H0514-25 ADS-2009 ModelSimulation modelzip2013-04-02
NXP_RFpower_Lib_V09p0RF Power Model Library for Microwave Office®Simulation modelzip2014-11-11
NXP_RFpower_Manual_MWO_20141111RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation modelpdf2014-11-11
NXP_RFPower_Simulation_ExampleRF Power Simulation Example for Microwave Office®Simulation modelzip2012-06-11
BLL6H0514-25_ADS-2011_ModelBLL6H0514-25 ADS-2011 ModelSimulation modelzip2014-04-11
sot467c_poflanged ceramic package; 2 mounting holes; 2 leadsOutline drawingpdf1999-12-27
SOT467C_112CDFM2; blister pack; standard product orientation 12NC ending 112Packingpdf2012-11-30
订购信息
型号订购码 (12NC)可订购的器件编号
BLL6H0514-259340 634 48112BLL6H0514-25,112
模型
标题类型日期
BLL6H0514-25 ADS-2009 ModelSimulation model2013-04-02
RF Power Model Library for Microwave Office®Simulation model2014-11-11
RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation model2014-11-11
RF Power Simulation Example for Microwave Office®Simulation model2012-06-11
BLL6H0514-25 ADS-2011 ModelSimulation model2014-04-11
其它
标题类型日期
PCB Design BLL6H0514-25 (Data sheet)Design support2012-02-24
LDMOS driver transistor BLL6H0514-25
Mounting and Soldering of RF transistors aerospace_defense
Fatigue in aluminum bond wires gan_devices
High Power RF LDMOS Transistors for Avionics Applications avionics_ldmos_transistors
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
Application Measurement Report BLL6H0514-25 1010-1050 MHz CA-058-12 BLL6H0514-25
flanged ceramic package; 2 mounting holes; 2 leads CLF1G0035_S_50
CDFM2; blister pack; standard product orientation 12NC ending 112 CLF1G0035_S_50
BLL6H0514-25 ADS-2009 Model BLL6H0514-25
RF Power Model Library for Microwave Office® CLF1G0060_S_30
RF Power Model Library Manual and Installation Instructions for Microwave Office® CLF1G0060_S_30
RF Power Simulation Example for Microwave Office® CLF1G0060_S_30
BLL6H0514-25 ADS-2011 Model BLL6H0514-25
PCB Design BLL6H0514-25 (Data sheet) BLL6H0514-25