BLL8H1214L(S)-500:LDMOS L-band radar power transistor

500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

特性和优势
    • Easy power control
    • Integrated dual side ESD protection
    • High flexibility with respect to pulse formats
    • Excellent ruggedness
    • High efficiency
    • Excellent thermal stability
    • Designed for broadband operation (1.2 GHz to 1.4 GHz)
    • Internally matched for ease of use
    • Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)
应用
    • L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency range
产品图片
关键参数
型号Package versionfrange [min] (MHz)frange [max] (MHz)PL(1dB) (W)VDS (V)η (%)GP (dB)Test signalProduct status
BLL8H1214L-500SOT539A12001400500505017Pulsed RF; Pulsed RFProduction
BLL8H1214LS-500SOT539B12001400500505017Pulsed RF; Pulsed RFProduction
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLL8H1214L-500

(SOT539A)
sot539a_poBulk Pack量产Standard MarkingBLL8H1214L-500U( 9340 687 34112 )
BLL8H1214LS-500

(SOT539B)
sot539b_poBulk Pack量产Standard MarkingBLL8H1214LS-500U( 9340 687 36112 )
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLL8H1214L-500BLL8H1214L-500UAlways Pb-freeNANA
BLL8H1214LS-500BLL8H1214LS-500UAlways Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLL8H1214L-500_1214LS-500 (中文)LDMOS L-band radar power transistorData sheetpdf2015-02-09
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
PCB_Design_BLL8H1214L-500_1214LS-500_Data-sheetPCB Design BLL8H1214L(S)-500 (Data sheet)Design supportzip2015-01-06
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
RFPower_Longevity_OverviewRF Power Longevity OverviewOther typepdf2014-09-09
sot539b_poearless flanged balanced ceramic package; 4 leadsOutline drawingpdf2012-05-08
sot539a_poflanged balanced ceramic package; 2 mounting holes; 4 leadsOutline drawingpdf2010-04-06
SOT539A_135CDFM4; Tape reel SMD; standard product orientation 12NC ending 135Packingpdf2012-12-03
SOT539A_112CDFM4; blister pack; standard product orientation 12NC ending 112Packingpdf2012-12-03
订购信息
型号订购码 (12NC)可订购的器件编号
BLL8H1214L-5009340 687 34112BLL8H1214L-500U
BLL8H1214LS-5009340 687 36112BLL8H1214LS-500U
其它
标题类型日期
PCB Design BLL8H1214L(S)-500 (Data sheet)Design support2015-01-06
LDMOS L-band radar power transistor BLL8H1214L_S_500
Mounting and Soldering of RF transistors aerospace_defense
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
RF Power Longevity Overview gan_devices
earless flanged balanced ceramic package; 4 leads BLU6H0410L_S_600P
flanged balanced ceramic package; 2 mounting holes; 4 leads BLU6H0410L_S_600P
CDFM4; Tape reel SMD; standard product orientation 12NC ending 135 BLU6H0410L_S_600P
CDFM4; blister pack; standard product orientation 12NC ending 112 BLU6H0410L_S_600P
PCB Design BLL8H1214L(S)-500 (Data sheet) BLL8H1214L_S_500