BLM2425M7S60P：LDMOS 2-stage power MMIC
60 W dual path, 2-stage power MMIC transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.
The BLM2425M7S60P is designed for high power CW applications and is assembled in a high performance plastic package.
特性和优势
应用
| 产品图片 |
关键参数
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2400 | 2500 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 60 | W | |||
| Gp | power gain | PL = 30 W; VDS = 32 V [0] | 27.5 | dB | ||
| RLin | input return loss | PL = 30 W; VDS = 32 V [0] | -18 | dB | ||
| ηD | drain efficiency | PL = 30 W; VDS = 32 V [0] | 45 | % |
封装与包装
| 型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 可订购的器件编号, (订购码 (12NC)) |
|---|---|---|---|---|---|---|---|
| BLM2425M7S60P |  HSOP16F (SOT1211-1) | sot1211-1_po | Reel 13" Q1/T1 in Drypack | 开发中 | Standard Marking | BLM2425M7S60PY( 9340 691 83518 ) |
引脚配置信息
| Pin | Symbol | Description | 外形简图 | 图形符号 |
|---|---|---|---|---|
| 1 | VDS(A1) | drain-source voltage of stage A1 |  |  |
| 2 | VGS(A2) | gate source voltage of stage A2 | ||
| 3 | VGS(A2) | gate source voltage of stage A2 | ||
| 4 | RF_IN_A | RF input path A | ||
| 5 | VGS(A1) | gate-source voltage of stage A1 | ||
| 6 | VGS(A1) | gate-source voltage of stage A1 | ||
| 7 | n.c. | not connected | ||
| 8 | n.c. | not connected | ||
| 9 | VGS(B1) | gate-source voltage of stage B1 | ||
| 10 | VGS(B1) | gate-source voltage of stage B1 | ||
| 11 | RF_IN_B | RF input path of B | ||
| 12 | VGS(B2) | gate-source voltage of stage B2 | ||
| 13 | VGS(B2) | gate-source voltage of stage B2 | ||
| 14 | VDS(B1) | drain-source voltage of stage B1 | ||
| 15 | RF_OUT_B/VDS(B2) | RF output section B / drain source voltage of stage B2 | ||
| 16 | RF_OUT_A/VDS(A2) | RF output section A / drain source voltage of stage A2 | ||
| 17 | GND | RF ground |
无铅环保信息
| 型号 | 可订购的器件编号 | RoHS / RHF | 无铅转换日期 | 潮湿敏感度等级 | MSL LF |
|---|---|---|---|---|---|
| BLM2425M7S60P | BLM2425M7S60PY |   | 3 | 3 |
文档资料
| 档案名称 | 标题 | 类型 | 格式 | 日期 |
|---|---|---|---|---|
| BLM2425M7S60P (中文) | LDMOS 2-stage power MMIC | Data sheet | 2015-05-18 | |
| AN11183 | Mounting and soldering of RF transistors in over-molded plastic packages | Application note | 2012-11-06 | |
| fatigue_in_aluminum_bond_wires | Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
| NXP_RF_manual_19th_edition | RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 | Other type | 2015-05-19 | |
| sot1211-1_po | plastic, heatsink small outline package; 16 leads(flat) | Outline drawing | 2013-06-25 |
订购信息
| 型号 | 订购码 (12NC) | 可订购的器件编号 |
|---|---|---|
| BLM2425M7S60P | 9340 691 83518 | BLM2425M7S60PY |
- LDMOS 2-stage power MMIC BLM2425M7S60P
- Mounting and soldering of RF transistors in over-molded plastic packages BLP8G21S-160PV
- Fatigue in aluminum bond wires gan_devices
- RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
- plastic, heatsink small outline package; 16 leads(flat) BLM8G0710S-45AB
