BLM7G24S-30BG:LDMOS 2级功率MMIC

BLM7G24S-30BG是采用恩智浦最先进GEN7 LDMOS技术的2级功率MMIC。该器件非常适合用作2100 MHz至2400 MHz频率范围内的通用驱动器。采用鸥翼式。

特性和优势
    • 集成式温度补偿偏置
    • 单级偏置可以从外部访问
    • 集成式电流感测
    • 集成式ESD保护
    • 极佳的热稳定性
    • 高功率增益
    • 片上匹配,便于使用(输入匹配至50Ω;输出部分匹配)
    • 设计用于宽带操作(频率范围:2100 MHz至2400 MHz)
    • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
应用
    • 适用于2100 MHz至2400 MHz频率范围内W-CDMA基站的RF功率MMIC
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range21002400MHz
PL(1dB)nominal output power at 1 dB gain compression30W
Gppower gainPL(AV) = 1.6 W; VDS = 28 V29.531.533.5dB
RLininput return lossPL(AV) = 1.6 W; VDS = 28 V; IDq = 75 mA; IDq2 = 233 mA-17-10dB
ηDdrain efficiencyPL(AV) = 1.6 W; VDS = 28 V; f = 2140 MHz1011.3%
ACPRadjacent channel power ratioPL(AV) = 1.6 W; VDS = 28 V; f = 2140 MHz; IDq = 75 mA; IDq2 = 233 mA-43-40dB
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLM7G24S-30BG
HSOP16
(SOT1212-1)
sot1212-1_poReel 13" Q1/T1 in Drypack量产Standard MarkingBLM7G24S-30BGY( 9340 679 89518 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1VDS(A1)drain-source voltage of stage A1
2VGSS(A2)gate sense FET and gate source voltage of stage A2
3VDSS(A2)drain sense FET source voltage of stage A2
4RF_IN_ARF input path A
5VGSS(A1)gate sense FET and gate source voltage of stage A1
6VDSS(A1)drain sense FET source voltage of stage A1
7n.c.not connected
8n.c.not connected
9n.c.not connected
10n.c.not connected
11n.c.not connected
12n.c.not connected
13n.c.not connected
14n.c.not connected
15n.c.not connected
16RF_OUT_A/VDS(A2)RF output path A / drain source voltage of stage A2
17GNDRF ground
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLM7G24S-30BGBLM7G24S-30BGY33
文档资料
档案名称标题类型格式日期
BLM7G24S-30BG (中文)LDMOS 2-stage power MMICData sheetpdf2015-07-01
AN11183Mounting and soldering of RF transistors in over-molded plastic packagesApplication notepdf2012-11-06
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLM7G24S-30BG_Data-sheetPCB Design BLM7G24S-30BG (Data sheet)Design supportzip2013-11-11
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
sot1212-1_poplastic, heatsink small outline package; 16 leads(flat)Outline drawingpdf2012-04-17
订购信息
型号订购码 (12NC)可订购的器件编号
BLM7G24S-30BG9340 679 89518BLM7G24S-30BGY
其它
标题类型日期
PCB Design BLM7G24S-30BG (Data sheet)Design support2013-11-11
LDMOS 2-stage power MMIC BLM7G24S-30BG
Mounting and soldering of RF transistors in over-molded plastic packages BLP8G21S-160PV
Enabling the Mobile Experience rf
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
plastic, heatsink small outline package; 16 leads(flat) BLM8G0710S-45ABG
PCB Design BLM7G24S-30BG (Data sheet) BLM7G24S-30BG