BLM8G0710S-45ABG:LDMOS 2-stage power MMIC

The BLM8G0710S-45AB(G) is a dual section, asymmetric, 2-stage power MMIC using NXP’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as small cell final stage in Doherty configuration, or as general purpose driver in the 700 MHz to 1000 MHz frequency range. Available in gull wing or straight lead outline.

特性和优势
    • Designed for broadband operation (frequency 700 MHz to 1000 MHz)
    • High section-to-section isolation enabling multiple combinations
    • High Doherty efficiency thanks to 2 : 1 asymmetry
    • Integrated temperature compensated bias
    • Biasing of individual stages is externally accessible
    • Integrated ESD protection
    • Excellent thermal stability
    • High power gain
    • On-chip matching for ease of use
    • Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)
应用
    • RF power MMIC for W-CDMA base stations in the 700 MHz to 1000 MHz frequency range. Possible circuit topologies are the following:
      • Asymmetric final stage in Doherty configuration
      • Asymmetric driver for high power Doherty amplifier
    • Asymmetric final stage in Doherty configuration
    • Asymmetric driver for high power Doherty amplifier
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range7001000MHz
PL(1dB)nominal output power at 1 dB gain compression45W
Gppower gainVDS = 28 V; f = 957.5 MHz [0]35.2dB
Gppower gainVDS = 28 V; f = 730.5 MHz [0]36.5dB
RLininput return lossVDS = 28 V; f = 957.5 MHz [0]-20dB
ηDdrain efficiencyVDS = 28 V; f = 957.5 MHz [0]24.5%
ηDdrain efficiencyVDS = 28 V; f = 730.5 MHz [0]24.5%
ACPR5Madjacent channel power ratio (5 MHz)VDS = 28 V; f = 957.5 MHz [0]-40dB
ACPR5Madjacent channel power ratio (5 MHz)VDS = 28 V; f = 730.5 MHz [0]-40dB
PAROpeak-to-average ratio outputf = 975.5 MHz [0]8.3dB
PAROpeak-to-average ratio outputf = 730.5 MHz [0]8dB
Gppower gainVDS = 28 V; f = 957.5 MHz [0]35dB
Gppower gainVDS = 28 V; f = 730.5 MHz [0]35.7dB
RLininput return lossVDS = 28 V; f = 730.5 MHz [0]-16dB
ηDdrain efficiencyVDS = 28 V; f = 957.5 MHz [0]27%
ηDdrain efficiencyVDS = 28 V; f = 730.5 MHz [0]24%
ACPR5Madjacent channel power ratio (5 MHz)VDS = 28 V; f = 957.5 MHz [0]-39dBc
ACPR5Madjacent channel power ratio (5 MHz)VDS = 28 V; f = 730.5 Hz [0]-41.5dBc
PAROoutput peak-to-average ratiof = 957.5 MHz [0]8dB
PAROoutput peak-to-average ratiof = 730.5 MHz [0]8dB
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLM8G0710S-45ABG
HSOP16
(SOT1212-1)
sot1212-1_poReel 13" Q1/T1 in Drypack开发中Standard MarkingBLM8G0710S-45ABGY( 9340 690 33518 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1VDS(A1)drain-source voltage of carrier section, driver stage (A1)
2VGS(A2)gate-source voltage of carrier section, final stage (A2)
3VGS(A1)gate-source voltage of carrier section, driver stage (A1)
4RF_IN_ARF input carrier section (A)
5n.c.not connected
6n.c.not connected
7n.c.not connected
8n.c.not connected
9n.c.not connected
10n.c.not connected
11RF_IN_BRF input peaking section (B)
12VGS(B1)gate-source voltage of peaking section, driver stage (B1)
13VGS(B2)gate-source voltage of peaking section, final stage (B2)
14VDS(B1)drain-source voltage of peaking section, driver stage (B1)
15RF_OUT_B/VDS(B2)RF output peaking section (B) / drain-source voltage of peaking section, final stage (B2)
16RF_OUT_A/VDS(A2)RF output carrier section (A) / drain-source voltage of carrier section, final stage (A2)
flangeGNDRF ground
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLM8G0710S-45ABGBLM8G0710S-45ABGY33
文档资料
档案名称标题类型格式日期
AN11183Mounting and soldering of RF transistors in over-molded plastic packagesApplication notepdf2012-11-06
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
75017604Gen8: the latest LDMOS RF power portfolio for wireless infrastructuresLeafletpdf2014-09-04
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
sot1212-1_poplastic, heatsink small outline package; 16 leads(flat)Outline drawingpdf2012-04-17
订购信息
型号订购码 (12NC)可订购的器件编号
BLM8G0710S-45ABG9340 690 33518BLM8G0710S-45ABGY
Mounting and soldering of RF transistors in over-molded plastic packages BLP8G21S-160PV
Enabling the Mobile Experience rf
Gen8: the latest LDMOS RF power portfolio for wireless infrastructures base_stations
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
plastic, heatsink small outline package; 16 leads(flat) BLM8G0710S-45ABG