BLP8G20S-80P:LDMOS功率晶体管

80 W LDMOS晶体管,适合1800 MHz至2200 MHz频率范围内的基站应用。

特性和优势
    • 设计用于宽带操作(1800 MHz至2200 MHz)
    • 极佳的耐用性
    • 高效率
    • 极佳的热稳定性
    • 内部匹配,便于使用
    • 高功率增益
    • 集成式ESD保护
    • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
应用
    • 适合1880 MHz至2200 MHz频率范围内基站和多载波应用的RF功率放大器
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range18002200MHz
PL(1dB)nominal output power at 1 dB gain compression80W
Gppower gainPL(AV) = 10 W; VDS = 28 V16.517.5dB
RLininput return lossPL(AV) = 10 W; VDS = 28 V; IDq = 300 mA-10-7dB
ηDdrain efficiencyPL(AV) = 10 W; VDS = 28 V; 1880 MHz < f < 1920 MHz; IDq = 300 mA2933%
ACPRadjacent channel power ratioPL(AV) = 10 W; VDS = 28 V; 1880 MHz < f < 1920 MHz; IDq = 300 mA-32-28dBc
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLP8G20S-80P
HSOP4F
(SOT1223-1)
sot1223-1_poReel 13" Q1/T1 in Drypack量产Standard MarkingBLP8G20S-80PY( 9340 686 65518 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1G2gate 2
2G1gate 1
3D1drain 1
4D2drain 2
5SOURCEsource
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLP8G20S-80PBLP8G20S-80PY33
文档资料
档案名称标题类型格式日期
BLP8G20S-80P (中文)Power LDMOS transistorData sheetpdf2014-10-13
AN11183Mounting and soldering of RF transistors in over-molded plastic packagesApplication notepdf2012-11-06
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLP8G20S-80P_Data-sheetPCB Design BLP8G20S-80P (Data sheet)Design supportzip2014-10-02
75017604Gen8: the latest LDMOS RF power portfolio for wireless infrastructuresLeafletpdf2014-09-04
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
sot1223-1_poplastic, heatsink small outline package; 4 leads(flat)Outline drawingpdf2012-05-03
订购信息
型号订购码 (12NC)可订购的器件编号
BLP8G20S-80P9340 686 65518BLP8G20S-80PY
其它
标题类型日期
PCB Design BLP8G20S-80P (Data sheet)Design support2014-10-02
Power LDMOS transistor BLP8G20S-80P
Mounting and soldering of RF transistors in over-molded plastic packages BLP8G21S-160PV
Enabling the Mobile Experience rf
Gen8: the latest LDMOS RF power portfolio for wireless infrastructures base_stations
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
plastic, heatsink small outline package; 4 leads(flat) BLP8G20S-80P
PCB Design BLP8G20S-80P (Data sheet) BLP8G20S-80P