BLS6G2731S-130:LDMOS S频段雷达功率晶体管

130 W LDMOS功率晶体管主要用于2.7 GHz至3.1 GHz范围的雷达应用。

特性和优势
    • 方便的功率控制
    • 集成ESD保护
    • 高度灵活的脉冲格式
    • 极佳的强度
    • 高效率
    • 极佳的热稳定性
    • 主要用于宽带操作(2.7 GHz至3.1 GHz)
    • 内部匹配以方便使用
    • 符合有害物质限制的Directive 2002/95/EC
应用
    • 2.7 GHz至3.1 GHz频率范围内的雷达应用
    • S波段功率放大器
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range27003100MHz
PL(1dB)nominal output power at 1 dB gain compression130W
Gppower gainPL = 130 W; VDS = 32 V1012dB
RLininput return lossPL = 130 W; VDS = 32 V; IDq = 100 mA-8-5.5dB
ηDdrain efficiencyPL = 130 W; VDS = 32 V; 2700 MHz ≤ f ≤ 3100 MHz; IDq = 100 mA4550%
PL(1dB)output power at 1 dB gain compressionVDS = 32 V; 2700 MHz ≤ f ≤ 3100 MHz; IDq = 100 mA140W
PLoutput power130W
Pdroop(pulse)pulse droop powerPL = 130 W00.5dB
VDSdrain-source voltagePL = 130 W32V
trrise timePL = 130 W; VDS = 32 V2050ns
tffall timePL = 130 W; VDS = 32 V650ns
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLS6G2731S-130
CDFM2
(SOT922-1)
sot922-1_poBulk Pack量产Standard MarkingBLS6G2731S-130,112( 9340 645 72112 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1Ddrain
2Ggate
3Ssource
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLS6G2731S-130BLS6G2731S-130,112Always Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLS6G2731S-130 (中文)LDMOS S-band radar power transistorData sheetpdf2010-11-18
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
PCB_Design_BLS6G2731S-130_Data-sheetPCB Design BLS6G2731S-130 (Data sheet)Design supportzip2012-02-24
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
BLS6G2731S-130_ADS-2009_ModelBLS6G2731S-130 ADS-2009 ModelSimulation modelzip2013-02-28
NXP_RFpower_Lib_V09p0RF Power Model Library for Microwave Office®Simulation modelzip2014-11-11
NXP_RFpower_Manual_MWO_20141111RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation modelpdf2014-11-11
NXP_RFPower_Simulation_ExampleRF Power Simulation Example for Microwave Office®Simulation modelzip2012-06-11
sot922-1_poCeramic earless flanged cavity package; 2 leadsOutline drawingpdf2005-11-21
订购信息
型号订购码 (12NC)可订购的器件编号
BLS6G2731S-1309340 645 72112BLS6G2731S-130,112
模型
标题类型日期
BLS6G2731S-130 ADS-2009 ModelSimulation model2013-02-28
RF Power Model Library for Microwave Office®Simulation model2014-11-11
RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation model2014-11-11
RF Power Simulation Example for Microwave Office®Simulation model2012-06-11
其它
标题类型日期
PCB Design BLS6G2731S-130 (Data sheet)Design support2012-02-24
LDMOS S-band radar power transistor BLS6G2731S-130
Mounting and Soldering of RF transistors aerospace_defense
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
Ceramic earless flanged cavity package; 2 leads BLS7G2933S-150
BLS6G2731S-130 ADS-2009 Model BLS6G2731S-130
RF Power Model Library for Microwave Office® CLF1G0060_S_30
RF Power Model Library Manual and Installation Instructions for Microwave Office® CLF1G0060_S_30
RF Power Simulation Example for Microwave Office® CLF1G0060_S_30
PCB Design BLS6G2731S-130 (Data sheet) BLS6G2731S-130