BLS6G2735L(S)-30:S波段LDMOS晶体管

30 W LDMOS功率晶体管,适用于2.7 GHz至3.5 GHz范围的S波段雷达应用。

特性和优势
    • 集成ESD保护
    • 极佳的强度
    • 高效率
    • 极佳的热稳定性
    • 主要用于宽带操作(2.7 GHz至3.5 GHz)
    • 内部匹配以方便使用
    • 符合有害物质限制的Directive 2002/95/EC
应用
    • 2.7 GHz至3.5 GHz频率范围内的S波段雷达应用
产品图片
关键参数
型号Package versionfrange [min] (MHz)frange [max] (MHz)PL(1dB) (W)VDS (V)η (%)GP (dB)Test signalProduct status
BLS6G2735L-30SOT1135A2700350030325013Pulsed RF; Pulsed RFProduction
BLS6G2735LS-30SOT1135B2700350030325013Pulsed RF; Pulsed RFProduction
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLS6G2735L-30
CDFM2
(SOT1135A)
sot1135a_poBulk Pack量产Standard MarkingBLS6G2735L-30,112( 9340 659 71112 )
BLS6G2735LS-30
CDFM2
(SOT1135B)
sot1135b_poBulk Pack量产Standard MarkingBLS6G2735LS-30,112( 9340 659 72112 )
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLS6G2735L-30BLS6G2735L-30,112Always Pb-freeNANA
BLS6G2735LS-30BLS6G2735LS-30,112Always Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLS6G2735L-30_6G2735LS-30 (中文)S-band LDMOS transistorData sheetpdf2012-09-24
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
PCB_Design_BLS6G2735L-30_6G2735LS-30_Data-sheetPCB Design BLS6G2735L(S)-30 (Data sheet)Design supportzip2012-09-04
75017399BLS6G2735L(S)-30: Cover the entire S-band with one 30 W driverLeafletpdf2013-03-21
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
RFPower_Longevity_OverviewRF Power Longevity OverviewOther typepdf2014-09-09
BLS6G2735-30_ADS-2009_ModelBLS6G2735-30 ADS-2009 ModelSimulation modelzip2013-08-02
BLS6G2735-30_ADS-2012_ModelBLS6G2735-30 ADS-2012 ModelSimulation modelzip2014-05-02
sot1135b_poearless flanged ceramic package; 2 leadsOutline drawingpdf2010-01-20
sot1135a_poflanged ceramic package; 2 mounting holes; 2 leadsOutline drawingpdf2010-01-20
订购信息
型号订购码 (12NC)可订购的器件编号
BLS6G2735L-309340 659 71112BLS6G2735L-30,112
BLS6G2735LS-309340 659 72112BLS6G2735LS-30,112
模型
标题类型日期
BLS6G2735-30 ADS-2009 ModelSimulation model2013-08-02
BLS6G2735-30 ADS-2012 ModelSimulation model2014-05-02
其它
标题类型日期
PCB Design BLS6G2735L(S)-30 (Data sheet)Design support2012-09-04
S-band LDMOS transistor BLS6G2735L_S_30
S-band LDMOS transistor BLS6G2735L_S_30
S-band LDMOS transistor BLS6G2735L_S_30
Mounting and Soldering of RF transistors aerospace_defense
BLS6G2735L(S)-30: Cover the entire S-band with one 30 W driver aerospace_defense
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
RF Power Longevity Overview gan_devices
earless flanged ceramic package; 2 leads BLS6G2735L_S_30
flanged ceramic package; 2 mounting holes; 2 leads BLS6G2735L_S_30
BLS6G2735-30 ADS-2009 Model BLS6G2735L_S_30
BLS6G2735-30 ADS-2012 Model BLS6G2735L_S_30
PCB Design BLS6G2735L(S)-30 (Data sheet) BLS6G2735L_S_30