2N3055: 15 A, 60 V NPN Bipolar Power Transistor

The PNP Bipolar Power Transistor is designed for use in high power amplifier and switching amplifier applications. The 2N3055 (NPN) and MJ2955 (PNP)are complementary devices.

特性
  • DC Current Gain - hFE = 20-70 @ IC = 4 Adc
  • Collector-Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
  • Excellent Safe Operating Area
  • Pb-Free Packages are Available
封装
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice model2N3055.LIB (0.0kB)0
Saber model2N3055.SIN (1.0kB)0
Spice 2 model2N3055.SP2 (0.0kB)0
Spice 3 model2N3055.SP3 (0.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-204 (TO-3)1-07 (32kB)Z
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Complementary Silicon Power Transistors2N3055/D (70.0kB)6
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
2N3055GActivePb-freeTO-204-21-07NATray Foam100$1.008
订购产品技术参数
ProductPolarityTypeVCE(sat) Max (V)IC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
2N3055GNPNGeneral Purpose3 1.1156020702.5115
Complementary Silicon Power Transistors (70.0kB) 2N3055
PSpice model 2N3055
Saber model 2N3055
Spice 2 model 2N3055
Spice 3 model 2N3055
TO-204 (TO-3) 2N6341