2N5302: High Power NPN Bipolar Power Transistor
The High Power Bipolar NPN Transistor is designed for use in power amplifier and switching circuits applications.
特性- Low Collector-Emitter Saturation Voltage VCE(sat)=0.75 Vdc (Max) @ IC = 10 Adc
- Pb-Free Package is Available
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封装
仿真模型 (4)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
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| 2N5302G | Active | Pb-free | TO-204-2 | 1-07 | NA | Tray Foam | 100 | $1.872 |
订购产品技术参数
| Product | Polarity | Type | VCE(sat) Max (V) | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
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| 2N5302G | NPN | General Purpose | 0.75 | 30 | 60 | 15 | 60 | 2 | 200 |
