2N5657: 0.5 A, 350 V NPN Bipolar Power Transistor

These devices are designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and AC line relays.

特性
  • Excellent DC Current Gain hFE = 30-250 @ IC = 100 mAdc
  • Current-Gain - Bandwith Product - fT=10MHz (Min) @ IC = 50 mAdc
  • Pb-Free Packages are Available
封装
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice Model2N5657.LIB (0.0kB)0
Saber Model2N5657.SIN (1.0kB)0
Spice2 Model2N5657.SP2 (0.0kB)0
Spice3 Model2N5657.SP3 (0.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-22577-09 (32.2kB)AD
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Plastic NPN Silicon High-Voltage Power Transistors2N5655/D (123kB)12DEC, 2013
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
2N5657GActivePb-free Halide freeTO-225-377-09NABulk Box500$0.2267
2N5657Last ShipmentsTO-225-377-09NABulk Box500
订购产品技术参数
ProductPolarityTypeVCE(sat) Max (V)IC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
2N5657GNPNGeneral Purpose10.5350302501020
Plastic NPN Silicon High-Voltage Power Transistors (123kB) 2N5657
PSpice Model 2N5657
Saber Model 2N5657
Spice2 Model 2N5657
Spice3 Model 2N5657
TO-225 2N5657