2N5883: 25 A, 60 V PNP Bipolar Power Transistor
The Power 25A 80 V Bipolar NPN Transistor is designed for general-purpose power amplifier and switching applications.
特性- Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc
- Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage
- Excellent DC Current Gain hFE = 20 (min) at IC = 10 Adc
- High Current Gain Bandwidth Product ft = 4.0 MHz (min) at IC = 1.0 Adc
- Pb-Free Packages are Available
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封装
仿真模型 (4)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| 2N5883G | Active | Pb-free | TO-204-2 | 1-07 | NA | Tray Foam | 100 | $1.944 |
订购产品技术参数
| Product | Polarity | Type | VCE(sat) Max (V) | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
|---|
| 2N5883G | PNP | General Purpose | 1 | 25 | 60 | 20 | 100 | 4 | 200 |
