2N5885: 25 A, 60 V NPN Bipolar Power Transistor

The Power 25A 80 V Bipolar NPN Transistor is designed for general-purpose power amplifier and switching applications.

特性
  • Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc
  • Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage
  • Excellent DC Current Gain hFE = 20 (min) at IC = 10 Adc
  • High Current Gain Bandwidth Product ft = 4.0 MHz (min) at IC = 1.0 Adc
  • Pb-Free Packages are Available
封装
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice Model2N5885.LIB (0.0kB)0
Saber Model2N5885.SIN (1.0kB)0
Spice2 Model2N5885.SP2 (0.0kB)0
Spice3 Model2N5885.SP3 (0.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-204 (TO-3)1-07 (32kB)Z
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Complementary Silicon High-Power Transistors2N5883/D (94.0kB)11
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
2N5885GActivePb-freeTO-204-21-07NATray Foam100$1.872
订购产品技术参数
ProductPolarityTypeVCE(sat) Max (V)IC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
2N5885GNPNGeneral Purpose12560201004200
Complementary Silicon High-Power Transistors (94.0kB) 2N5886
PSpice Model 2N5885
Saber Model 2N5885
Spice2 Model 2N5885
Spice3 Model 2N5885
TO-204 (TO-3) 2N6341