2N6035: 4.0 A, 60 V PNP Darlington Bipolar Power Transistor

The Power 4 A, 80 V NPN Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.

特性
  • High DC Current Gain -hFE = 2000 (Typ) @ IC = 2.0 Adc
  • Collector-Emitter Sustaining Voltage - @ 100 mAdcVCEO(sus) = 60 Vdc (Min) - 2N6035, 2N6038VCEO(sus) = 80 Vdc (Min) - 2N6036, 2N6039
  • Forward Biased Second Breakdown Current CapabilityIS/b = 1.5 Adc @ 25 Vdc
  • Monolithic Construction with Built-in Base-EmitterResistors to Limit Leakage Multiplication
  • Space-Saving High Performance-to-Cost RatioTO-225AA Plastic Package
  • Pb-Free Packages are Available
封装
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice Model2N6035.LIB (1.0kB)0
Saber Model2N6035.SIN (1.0kB)0
Spice2 Model2N6035.SP2 (1.0kB)0
Spice3 Model2N6035.SP3 (1.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-22577-09 (32.2kB)AD
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Plastic Darlington Complementary Silicon Power Transistors2N6035/D (144kB)15DEC, 2013
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
2N6035GActivePb-free Halide freeTO-225-377-09NABulk Box500$0.3131
订购产品技术参数
ProductPolarityIC Continuous (A)V(BR)CEO Min (V)VCE(sat) Max (V)hFE Min (k)hFE Max (k)fT Min (MHz)
2N6035GPNP46020.751525
Plastic Darlington Complementary Silicon Power Transistors (144kB) 2N6039
PSpice Model 2N6035
Saber Model 2N6035
Spice2 Model 2N6035
Spice3 Model 2N6035
TO-225 2N5657