2N6052: 12 A, 100 V PNP Darlington Bipolar Power Transistor _ BDTIC 中国领先电子元器件代理商

2N6052: 12 A, 100 V PNP Darlington Bipolar Power Transistor

This Bipolar Power PNP Darlington Transistor is designed for general-purpose amplifier and low frequency switching applications.

特性

High DC Current GainhFE = 3500 (Typ) @ IC = 5.0 Adc
Collector-Emitter Sustaining Voltage— @ 100 mAVCEO(sus) = 80 Vdc (Min)—2N6058100 Vdc (Min)—2N6052, 2N6059
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
This is a Pb-Free Device

仿真模型 (4)

Document Title	Document ID/Size	Revision	Revision Date
PSpice Model	2N6052.LIB (1.0kB)	0
Saber Model	2N6052.SIN (1.0kB)	0
Spice2 Model	2N6052.SP2 (1.0kB)	0
Spice3 Model	2N6052.SP3 (1.0kB)	0

封装图纸 (1)

Document Title	Document ID/Size	Revision
TO-204 (TO-3)	1-07 (32kB)	Z

数据表 (1)

Document Title	Document ID/Size	Revision	Revision Date
Darlington Complementary Silicon Power Transistors	2N6052/D (132.0kB)	5

产品订购型号

产品	状况	Compliance	封装		MSL*	容器		预算价格 (1千个数量的单价）
2N6052G	Active	Pb-free	TO-204-2	1-07	NA	Tray Foam	100	$2.0879

订购产品技术参数

Product	Polarity	IC Continuous (A)	V(BR)CEO Min (V)	VCE(sat) Max (V)	hFE Min (k)	hFE Max (k)	fT Min (MHz)
2N6052G	PNP	12	100	2	0.75	18	4

Darlington Complementary Silicon Power Transistors (132.0kB) 2N6052

PSpice Model 2N6052

Saber Model 2N6052

Spice2 Model 2N6052

Spice3 Model 2N6052

TO-204 (TO-3) 2N6341

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