2N6287: 20 A, 100 V PNP Darlington Bipolar Power Transistor

The Power 20A 100 V PNP Darlington Transistors is designed for general-purpose amplifier and low-frequency switching applications.

特性
  • High DC Current Gain @ IC = 10 Adc hFE = 2400 (Typ) - 2N6284 hFE = 4000 (Typ) - 2N6287
  • Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min)
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • Pb-Free Packages are Available
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice Model2N6287.LIB (1.0kB)0
Saber Model2N6287.SIN (1.0kB)0
Spice2 Model2N6287.SP2 (1.0kB)0
Spice3 Model2N6287.SP3 (1.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-204 (TO-3)1-07 (32kB)Z
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Darlington Complementary Silicon Power Transistors2N6284/D (135.0kB)4
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
2N6287GActivePb-freeTO-204-21-07NATray Foam100$2.0879
订购产品技术参数
ProductPolarityIC Continuous (A)V(BR)CEO Min (V)VCE(sat) Max (V)hFE Min (k)hFE Max (k)fT Min (MHz)
2N6287GPNP2010020.75184
Darlington Complementary Silicon Power Transistors (135.0kB) 2N6287
PSpice Model 2N6287
Saber Model 2N6287
Spice2 Model 2N6287
Spice3 Model 2N6287
TO-204 (TO-3) 2N6341