2N6388: 10 A, 80 V NPN Darlington Bipolar Power Transistor

The Power 8A 80 V NPN Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.

特性
  • High DC Current Gain -hFE=2500 (Typ) @Ic=4.0 Adc
  • Collector-Emitter Sustaining Voltage - @ 100 mAdcVceo(sus) = 60 Vdc (Min) - 2N6387Vceo (sus) = 80 Vdc (Min) - 2N6388
  • Collector-Emitter Sustaining Voltage - @ 100 mAdcVceo(sus) = 60 Vdc (Min) - 2N6387Vceo (sus) = 80 Vdc (Min) - 2N6388
  • Low Collector-Emitter Saturation Voltage-Vce(sat) = 2.0 Vdc (Max) @ Ic=5.0 Adc
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • T0-220AB Compact Package
  • Epoxy meets UL94, VO @ 1/8 inch
  • ESD Ratings Machine Model C and Human Body Model 3B
  • Pb-Free Packages are Available
封装
仿真模型 (8)
Document TitleDocument ID/SizeRevisionRevision Date
2N6388 PSpice Model2N6388.LIB (1.0kB)0
2N6388 Saber Model2N6388.SIN (1.0kB)0
2N6388 Spice2 Model2N6388.SP2 (1.0kB)0
2N6388 Spice3 Model2N6388.SP3 (1.0kB)0
PSpice Model2N6387.LIB (1.0kB)0
Saber Model2N6387.SIN (1.0kB)0
Spice2 Model2N6387.SP2 (1.0kB)0
Spice3 Model2N6387.SP3 (1.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-220 3 LEAD STANDARD221A-09 (30.9kB)AH
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Plastic Medium-Power Silicon Transistors2N6387/D (107kB)15Nov, 2014
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
2N6387GActivePb-freeTO-220-3221A-09NATube50$0.48
2N6388GActivePb-freeTO-220-3221A-09NATube50$0.48
2N6387Last ShipmentsTO-220-3221A-09NATube50
2N6388Last ShipmentsTO-220-3221A-09NATube50
订购产品技术参数
ProductPolarityIC Continuous (A)V(BR)CEO Min (V)VCE(sat) Max (V)hFE Min (k)hFE Max (k)fT Min (MHz)
2N6387GNPN1060212020
2N6388GNPN1080212020
Plastic Medium-Power Silicon Transistors (107kB) 2N6388
2N6388 PSpice Model 2N6388
2N6388 Saber Model 2N6388
2N6388 Spice2 Model 2N6388
2N6388 Spice3 Model 2N6388
PSpice Model 2N6388
Saber Model 2N6388
Spice2 Model 2N6388
Spice3 Model 2N6388
TO-220 3 LEAD STANDARD NTP6412AN