BDW47: 15 A, 100 V PNP Darlington Bipolar Power Transistor

This series of plastic, medium-power NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. The BDW42, BDW46 and BDW47 are complementary devices.

特性
  • High DC Current Gain - hFE = 2500 (typ.) @ IC = 5.0 Adc.
  • Collector Emitter Sustaining Voltage @ 30 mAdc: VCEO(sus) = 80 Vdc (min.) BDW46 VCEO(sus) = 100 Vdc (min.) - BDW42/BDW47
  • Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max.) @ IC = 5.0 Adc VCE(sat) = 3.0 Vdc (max.) @ IC = 10.0 Adc
  • Monolithic Construction with Built-In Base Emitter Shunt resistors
  • TO-220AB Compact Package
  • Pb-Free Packages are Available
封装
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelBDW47.LIB (1.0kB)0
Saber ModelBDW47.SIN (1.0kB)0
Spice2 ModelBDW47.SP2 (1.0kB)0
Spice3 ModelBDW47.SP3 (1.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-220 3 LEAD STANDARD221A-09 (30.9kB)AH
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Darlington Complementary Silicon Power TransistorsBDW42/D (83kB)17Jul, 2016
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
BDW47GActivePb-freeTO-220-3221A-09NATube50$0.7066
BDW47Last ShipmentsTO-220-3221A-09NATube50
订购产品技术参数
ProductPolarityIC Continuous (A)V(BR)CEO Min (V)VCE(sat) Max (V)hFE Min (k)hFE Max (k)fT Min (MHz)
BDW47GPNP1510021-4
Darlington Complementary Silicon Power Transistors (83kB) BDW47
PSpice Model BDW47
Saber Model BDW47
Spice2 Model BDW47
Spice3 Model BDW47
TO-220 3 LEAD STANDARD NTP6412AN