BDX33B: 10 A, 80 V NPN Darlington Bipolar Power Transistor

The 10 A, 100 V PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX33B, BDX33C, BDX34B and BDX34C are complementary devices.

特性
  • High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0
  • Collector-Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) BDX33B, 34B VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C
  • Low Collector-Emitter Saturation Voltage CE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc BDX33B, 33C/34B, 34C
  • Monolithic Construction with Build-In Base-Emitter Shunt resistors
  • TO-220AB Compact Package
  • Pb-Free Packages are Available
封装
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelBDX33B.LIB (1.0kB)0
Saber ModelBDX33B.SIN (1.0kB)0
Spice2 ModelBDX33B.SP2 (1.0kB)0
Spice3 ModelBDX33B.SP3 (1.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-220 3 LEAD STANDARD221A-09 (30.9kB)AH
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Darlington Complementary Silicon Power TransistorsBDX33B/D (94kB)14Nov, 2014
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
BDX33BGActivePb-freeTO-220-3221A-09NATube50$0.4307
BDX33BLast ShipmentsTO-220-3221A-09NATube50
订购产品技术参数
ProductPolarityIC Continuous (A)V(BR)CEO Min (V)VCE(sat) Max (V)hFE Min (k)hFE Max (k)fT Min (MHz)
BDX33BGNPN10802.50.75--
Darlington Complementary Silicon Power Transistors (94kB) BDX34C
PSpice Model BDX33B
Saber Model BDX33B
Spice2 Model BDX33B
Spice3 Model BDX33B
TO-220 3 LEAD STANDARD NTP6412AN