BDX53C: Medium Power NPN Darlington Bipolar Power Transistor

The 8 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX53B, BDX53C, BDX54B and BDX54C are complementary devices.

特性
  • High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc
  • Collector Emitter Sustaining Voltage @ 100 mAdcVCEO(sus) = 80 Vdc (Min) BDX53B, 54B VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C
  • Low Collector-Emitter Saturation VoltageVCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 AdcVCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • TO-220AB Compact Package
  • Pb-Free Packages are Available
封装
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelBDX53C.LIB (1.0kB)0
Saber ModelBDX53C.SIN (1.0kB)0
Spice2 ModelBDX53C.SP2 (1.0kB)0
Spice3 ModelBDX53C.SP3 (1.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-220 3 LEAD STANDARD221A-09 (30.9kB)AH
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Plastic Medium-Power Complementary Silicon TransistorsBDX53B/D (109kB)15Nov, 2014
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
BDX53CGActivePb-freeTO-220-3221A-09NATube50$0.4307
BDX53CLast ShipmentsTO-220-3221A-09NATube50
订购产品技术参数
ProductPolarityIC Continuous (A)V(BR)CEO Min (V)VCE(sat) Max (V)hFE Min (k)hFE Max (k)fT Min (MHz)
BDX53CGNPN810020.75--
Plastic Medium-Power Complementary Silicon Transistors (109kB) BDX54C
PSpice Model BDX53C
Saber Model BDX53C
Spice2 Model BDX53C
Spice3 Model BDX53C
TO-220 3 LEAD STANDARD NTP6412AN