CPH3356: Power MOSFET, -20V, 137mΩ, -2.5A, Single P-Channel

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This devices is suitable for applications with low gate charge driving or low on resistance requirements.

特性
  • 1.8V Drive
  • Low On-Resistance
  • ESD Diode - Protected Gate
  • Pb-Free, Halogen Free and RoHS Compliance
优势
  • Drive at low voltage
  • Minimize conduction loss
  • ESD resistance
  • Environment friendliness
应用
  • Load Switch
  • Motor Driver
终端产品
  • White goods, Game, Mobile Scanner, Recorder, Ink Jet Printer
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Power MOSFET, -20V, 137mOhm, -2.5A, Single P-ChannelCPH3356/D (633kB)2Apr, 2015
封装图纸 (1)
Document TitleDocument ID/SizeRevision
CPH3318BA (47.7kB)O
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
CPH3356-TL-HActive, Not RecPb-free Halide freeCPH-3318BA1Tape and Reel3000$0.1253
CPH3356-TL-WActivePb-free Halide freeCPH-3318BA1Tape and Reel3000$0.116
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)RDS(on) Max @ VGS = 2.5 V (mΩ)RDS(on) Max @ VGS = 4.5 V (mΩ)RDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
CPH3356-TL-WP-ChannelSingle-2010-1.4-2.512031373.30.722506045
Power MOSFET, -20V, 137mOhm, -2.5A, Single P-Channel (633kB) CPH3356
CPH3 CPH3448