CPH6337: Power MOSFET, -12V, 70mΩ, -3.5A, Single P-Channel

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.

特性
  • High Speed Switching
  • 1.8V drive
  • Low On-Resistance
  • Pb-Free and RoSH compliance
  • Halogen Free compliance : CPH6337-TL-W
优势
  • Reduce dynamic power losses
  • Drive at Low Voltage
  • Improves Efficiency by Reducing Conduction Losses, Reduces Heat Dissipation
  • Environmental Consideration
  • Environmental Consideration
应用
  • Load Switch
终端产品
  • Modem Card
  • Multi Function Printer
仿真模型 (1)
Document TitleDocument ID/SizeRevisionRevision Date
CPH6337 SPICE PARAMETERCPH6337-SPICE/D (21kB)0Jun, 2014
封装图纸 (1)
Document TitleDocument ID/SizeRevision
CPH6318BD (48.0kB)O
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Power MOSFET, -12V, 70mOhm, -3.5A, Single P-ChannelCPH6337/D (621kB)2Sep, 2015
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
CPH6337-TL-ELifetimePb-freeCPH-6318BD1Tape and Reel3000$0.158
CPH6337-TL-WActivePb-free Halide freeCPH-6318BD1Tape and Reel3000$0.12
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)RDS(on) Max @ VGS = 2.5 V (mΩ)RDS(on) Max @ VGS = 4.5 V (mΩ)RDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
CPH6337-TL-WP-ChannelSingle-1210-1.4-3.51.6115705.61.6405145100
Power MOSFET, -12V, 70mOhm, -3.5A, Single P-Channel (621kB) CPH6337
CPH6337 SPICE PARAMETER CPH6337
CPH6 NVC6S5A354PLZ