MJ11032: 50 A, 120 V NPN Darlington Bipolar Power Transistor

These Bipolar Power Darlington Transistors are for use as output devices in complementary general purpose amplifier applications.

特性
  • High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc
  • Curves to 100 A (Pulsed)
  • Diode Protection to Rated IC
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistor
  • Junction Temperature to +200°C
  • Pb-Free Packages are Available
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
LIB Model for MJ11032MJ11032.LIB (1.0kB)0
SIN Model for MJ11032MJ11032.SIN (1.0kB)0
SP2 Model for MJ11032MJ11032.SP2 (1.0kB)0
SP3 Model for MJ11032MJ11032.SP3 (1.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-204 (TO-3)197A-05 (3.2kB)
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
High-Current Complementary Silicon TransistorsMJ11028/D (116.0kB)6
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
MJ11032GActivePb-freeTO-204-2 / TO-3-2197A-05NATray Foam100$5.1479
订购产品技术参数
ProductPolarityIC Continuous (A)V(BR)CEO Min (V)VCE(sat) Max (V)hFE Min (k)hFE Max (k)fT Min (MHz)
MJ11032GNPN501202.5118-
High-Current Complementary Silicon Transistors (116.0kB) MJ11033
LIB Model for MJ11032 MJ11032
SIN Model for MJ11032 MJ11032
SP2 Model for MJ11032 MJ11032
SP3 Model for MJ11032 MJ11032
TO-204 (TO-3) 2N5686