NDBA170N06A: N-Channel Power MOSFET, 60V, 170A, 3.3mΩ, TO-263.
The NDBA170N06A N-channel medium voltage MOSFET product is capable of 60V breakdown and 3.3mOhm ultra low on-resistance. This new generation MOSFET features ultra low RDS(on) resulting in improved efficiency.
特性- Halogen free compliance
- Ultra low ON resistance
- High current capability
- Industry standard package
| 优势- Environmental consideration
- Improves efficiency by reducing conduction losses
- Can be used in high load applications
- Standard footprint for direct drop-in
|
应用- Multi-Cells battery protection
| 终端产品- E-Bike
- ESS(Energy storage system)
- P-Tool
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数据表 (1)
仿真模型 (1)
封装图纸 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NDBA170N06AT4H | Active | Pb-free
Halide free | D2PAK-3 | 418AJ | 1 | Tape and Reel | 800 | $1.32 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NDBA170N06AT4H | N-Channel | Single | 60 | 20 | 2.6 | 170 | 90 | | | 3.3 | | 280 | | 310 | 15800 | 1000 | 740 |
