NGB8202A: Ignition IGBT, N-Channel, 20 A, 400 V

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry intergrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or whatever high voltage and high current switching is required.

特性
  • Ideal for Coil-on-Plug and Driver-on-Coil Applications.
  • Gate-Emitter ESD Protection
  • Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load.
  • Intergrated ESD Diode Protection
  • Low Threshhold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices
  • Low Saturation Voltage
  • High Pulsed Current Capabilty
  • Optional Gate Resistor (RG and Gate-Emitter Resistor (RGE)
应用
  • Ignition Systems Direct Fuel Injection
终端产品
  • Automotive
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Ignition IGBT, N-Channel, 20 A, 400 V, D2PAKNGB8202N/D (119.0kB)7
封装图纸 (1)
Document TitleDocument ID/SizeRevision
D2PAK 2 LEAD418B-04 (35.3kB)L
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
NGB8202ANT4GActivePb-free Halide freeIgnition IGBT, N-Channel, 20 A, 400 VD2PAK-3418B-042Tape and Reel800$0.8
订购产品技术参数
ProductV(BR)CES Typ (V)IC Max (A)VCE(sat) Typ (V)VF Typ (V)Eoff Typ (mJ)Eon Typ (mJ)Trr Typ (ns)Irr Typ (A)Gate Charge Typ (nC)Short Circuit Withstand (us)EAS Typ (mJ)PD Max (W)Co-Packaged Diode
NGB8202ANT4G400201.3250150No
Ignition IGBT, N-Channel, 20 A, 400 V, D2PAK NGB8202A
D2PAK 2 LEAD NVB6412AN